SI5999EDU-T1-GE3

MOSFET 2P-CH 20V 6A POWERPAK

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Specifications
Part Number:SI5999EDU-T1-GE3
Manufacturer:Vishay Siliconix
Description:MOSFET 2P-CH 20V 6A POWERPAK
RoHs Status:
Nkesp Part Number:73D-SI5999EDU-T1-GE3
Part Status4088 pcs
Manufacturer:Vishay Siliconix
Vgs(th) (Max) @ Id:1.5V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® ChipFet Dual
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:59mOhm @ 3.5A, 4.5V
Power - Max:10.4W
Package / Case:PowerPAK® ChipFET™ Dual
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:496pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:6A
Configuration:2 P-Channel (Dual)
Base Product Number:SI5999
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In stock: 4088 pcs

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Data sheet

Product Comparison

Part Number SI5999EDU-T1-GE3
SI5999EDU-T1-GE3
SI5943DU-T1-E3
SI5943DU-T1-E3
SI5975DC-T1-GE3
SI5975DC-T1-GE3
SI5936DU-T1-GE3
SI5936DU-T1-GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Supplier Device PackagePowerPAK® ChipFet DualPowerPAK® ChipFet Dual1206-8 ChipFET™PowerPAK® ChipFet Dual
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
SeriesTrenchFET®TrenchFET®TrenchFET®TrenchFET®
Configuration2 P-Channel (Dual)2 P-Channel (Dual)2 P-Channel (Dual)2 N-Channel (Dual)
Vgs(th) (Max) @ Id1.5V @ 250µA1V @ 250µA450mV @ 1mA (Min)2.2V @ 250µA
Rds On (Max) @ Id, Vgs59mOhm @ 3.5A, 4.5V64mOhm @ 3.6A, 4.5V86mOhm @ 3.1A, 4.5V30mOhm @ 5A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Package / CasePowerPAK® ChipFET™ DualPowerPAK® ChipFET™ Dual8-SMD, Flat LeadPowerPAK® ChipFET™ Dual
Base Product NumberSI5999SI5943SI5975SI5936
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V15nC @ 8V9nC @ 4.5V11nC @ 10V
FET FeatureLogic Level GateLogic Level GateLogic Level GateLogic Level Gate
Power - Max10.4W8.3W1.1W10.4W
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C6A6A3.1A6A
Drain to Source Voltage (Vdss)20V12V12V30V
Input Capacitance (Ciss) (Max) @ Vds496pF @ 10V460pF @ 6V-320pF @ 15V

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