In stock: 34123 pcs
| Part Number |
SI5517DU-T1-GE3
|
SI5511DC-T1-GE3
 |
SI5515DC-T1-E3
|
SI5519DU-T1-GE3
|
|
|---|---|---|---|---|---|
| Manufacturer | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | - | |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 8V | 7.1nC @ 5V | 7.5nC @ 4.5V | 17.5nC @ 10V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | 2V @ 250µA | 1V @ 250µA | 1.8V @ 250µA | |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4.4A, 4.5V | 55mOhm @ 4.8A, 4.5V | 40mOhm @ 4.4A, 4.5V | 36mOhm @ 6.1A, 4.5V | |
| Package | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | |
| Configuration | N and P-Channel | N and P-Channel | N and P-Channel | N and P-Channel | |
| Current - Continuous Drain (Id) @ 25°C | 6A | 4A, 3.6A | 4.4A, 3A | 6A | |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V | 435pF @ 15V | - | 660pF @ 10V | |
| Drain to Source Voltage (Vdss) | 20V | 30V | 20V | 20V | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | |
| Base Product Number | SI5517 | SI5511 | SI5515 | SI5519 | |
| Package / Case | PowerPAK® ChipFET™ Dual | 8-SMD, Flat Lead | 8-SMD, Flat Lead | PowerPAK® ChipFET™ Dual | |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | |
| Series | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® | |
| Power - Max | 8.3W | 3.1W, 2.6W | 1.1W | 10.4W | |
| Supplier Device Package | PowerPAK® ChipFet Dual | 1206-8 ChipFET™ | 1206-8 ChipFET™ | PowerPAK® ChipFet Dual |
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