SI4804CDY-T1-E3

MOSFET 2N-CH 30V 8A 8SO

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Specifications
Part Number:SI4804CDY-T1-E3
Manufacturer:Vishay / Siliconix
Description:MOSFET 2N-CH 30V 8A 8SO
RoHs Status:
Nkesp Part Number:73D-SI4804CDY-T1-E3
Part Status3598 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:2.4V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOIC
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:22mOhm @ 7.5A, 10V
Power - Max:3.1W
Package / Case:8-SOIC (0.154", 3.90mm Width)
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:865pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
FET Feature:-
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:8A
Configuration:2 N-Channel (Dual)
Base Product Number:SI4804

In stock: 3598 pcs

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Product Comparison

Part Number SI4804CDY-T1-E3
SI4804CDY-T1-E3
SI4816BDY-T1-E3
SI4816BDY-T1-E3
SI4804CDY-T1-GE3
SI4804CDY-T1-GE3
SI4814BDY-T1-E3
SI4814BDY-T1-E3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
FET Feature-Logic Level Gate-Logic Level Gate
SeriesTrenchFET®LITTLE FOOT®TrenchFET®LITTLE FOOT®
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds865pF @ 15V-865pF @ 15V-
Supplier Device Package8-SOIC8-SOIC8-SOIC8-SOIC
Configuration2 N-Channel (Dual)2 N-Channel (Half Bridge)2 N-Channel (Dual)2 N-Channel (Half Bridge)
Package / Case8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)
Base Product NumberSI4804SI4816SI4804SI4814
Rds On (Max) @ Id, Vgs22mOhm @ 7.5A, 10V18.5mOhm @ 6.8A, 10V22mOhm @ 7.5A, 10V18mOhm @ 10A, 10V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Vgs(th) (Max) @ Id2.4V @ 250µA3V @ 250µA2.4V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V10nC @ 5V23nC @ 10V10nC @ 4.5V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V30V30V30V
Current - Continuous Drain (Id) @ 25°C8A5.8A, 8.2A8A10A, 10.5A
Power - Max3.1W1W, 1.25W3.1W3.3W, 3.5W

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