SI4686DY-T1-E3

MOSFET N-CH 30V 18.2A 8SO

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Specifications
Part Number:SI4686DY-T1-E3
Manufacturer:Vishay / Siliconix
Description:MOSFET N-CH 30V 18.2A 8SO
RoHs Status:
Nkesp Part Number:73D-SI4686DY-T1-E3
Part Status28906 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOIC
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:9.5mOhm @ 13.8A, 10V
Power Dissipation (Max):3W (Ta), 5.2W (Tc)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1220 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:18.2A (Tc)
Base Product Number:SI4686
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In stock: 28906 pcs

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Product Comparison

Part Number SI4686DY-T1-E3
SI4686DY-T1-E3
SI4776DY-T1-GE3
SI4776DY-T1-GE3
SI4778DY-T1-GE3
SI4778DY-T1-GE3
SI4752DY-T1-GE3
SI4752DY-T1-GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Rds On (Max) @ Id, Vgs9.5mOhm @ 13.8A, 10V16mOhm @ 10A, 10V23mOhm @ 7A, 10V5.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds1220 pF @ 15 V521 pF @ 15 V680 pF @ 13 V1700 pF @ 15 V
FET Feature---Schottky Diode (Body)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Current - Continuous Drain (Id) @ 25°C18.2A (Tc)11.9A (Tc)8A (Tc)25A (Tc)
SeriesTrenchFET®SkyFET®, TrenchFET®TrenchFET®SkyFET®, TrenchFET®
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TA)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id3V @ 250µA2.3V @ 1mA2.2V @ 250µA2.2V @ 1mA
Vgs (Max)±20V±20V±16V±20V
Drain to Source Voltage (Vdss)30 V30 V25 V30 V
Package / Case8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V17.5 nC @ 10 V18 nC @ 10 V43 nC @ 10 V
Supplier Device Package8-SOIC8-SOIC8-SOIC8-SOIC
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Base Product NumberSI4686SI4776SI4778SI4752
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Power Dissipation (Max)3W (Ta), 5.2W (Tc)4.1W (Tc)2.4W (Ta), 5W (Tc)3W (Ta), 6.25W (Tc)

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