SI4102DY-T1-GE3

MOSFET N-CH 100V 3.8A 8SO

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Part Number:SI4102DY-T1-GE3
Manufacturer:Vishay / Siliconix
Description:MOSFET N-CH 100V 3.8A 8SO
RoHs Status:
Nkesp Part Number:73D-SI4102DY-T1-GE3
Part Status3452 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOIC
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:158mOhm @ 2.7A, 10V
Power Dissipation (Max):2.4W (Ta), 4.8W (Tc)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:370 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Tc)
Base Product Number:SI4102
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In stock: 3452 pcs

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Product Comparison

Part Number SI4102DY-T1-GE3
SI4102DY-T1-GE3
SI4100DY-T1-GE3
SI4100DY-T1-GE3
SI4104DY-T1-GE3
SI4104DY-T1-GE3
SI4122DY-T1-GE3
SI4122DY-T1-GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
FET Feature----
Package / Case8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss)100 V100 V100 V40 V
Base Product NumberSI4102SI4100SI4104SI4122
Power Dissipation (Max)2.4W (Ta), 4.8W (Tc)2.5W (Ta), 6W (Tc)2.5W (Ta), 5W (Tc)3W (Ta), 6W (Tc)
Supplier Device Package8-SOIC8-SOIC8-SOIC8-SOIC
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V20 nC @ 10 V13 nC @ 10 V95 nC @ 10 V
Rds On (Max) @ Id, Vgs158mOhm @ 2.7A, 10V63mOhm @ 4.4A, 10V105mOhm @ 5A, 10V4.5mOhm @ 15A, 10V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds370 pF @ 50 V600 pF @ 50 V446 pF @ 50 V4200 pF @ 20 V
SeriesTrenchFET®TrenchFET®TrenchFET®TrenchFET®
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Current - Continuous Drain (Id) @ 25°C3.8A (Tc)6.8A (Tc)4.6A (Tc)27.2A (Tc)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V6V, 10V10V4.5V, 10V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Vgs (Max)±20V±20V±20V±25V
Vgs(th) (Max) @ Id4V @ 250µA4.5V @ 250µA4.5V @ 250µA2.5V @ 250µA

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