SI2351DS-T1-GE3

MOSFET P-CH 20V 2.8A SOT23-3

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Specifications
Part Number:SI2351DS-T1-GE3
Manufacturer:Vishay / Siliconix
Description:MOSFET P-CH 20V 2.8A SOT23-3
RoHs Status:
Nkesp Part Number:73D-SI2351DS-T1-GE3
Part Status4753 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:1.5V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23-3 (TO-236)
Series:-
Rds On (Max) @ Id, Vgs:115mOhm @ 2.4A, 4.5V
Package / Case:TO-236-3, SC-59, SOT-23-3
Package:Cut Tape (CT)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs:5.1 nC @ 5 V
FET Type:P-Channel
FET Feature:-
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
Base Product Number:SI2351
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In stock: 4753 pcs

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Product Comparison

Part Number SI2351DS-T1-GE3
SI2351DS-T1-GE3
SI2365EDS-T1-GE3
SI2365EDS-T1-GE3
SI2351DS-T1-E3
SI2351DS-T1-E3
SI2347DS-T1-GE3
SI2347DS-T1-GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 10 V-250 pF @ 10 V705 pF @ 15 V
Supplier Device PackageSOT-23-3 (TO-236)SOT-23-3 (TO-236)SOT-23-3 (TO-236)SOT-23-3 (TO-236)
FET Feature----
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
PackageCut Tape (CT)Tape & Reel (TR)Cut Tape (CT)Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs5.1 nC @ 5 V36 nC @ 8 V5.1 nC @ 5 V22 nC @ 10 V
Vgs(th) (Max) @ Id1.5V @ 250µA1V @ 250µA1.5V @ 250µA2.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C2.8A (Tc)5.9A (Tc)2.8A (Tc)5A (Tc)
Base Product NumberSI2351SI2365SI2351SI2347
FET TypeP-ChannelP-ChannelP-ChannelP-Channel
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss)20 V20 V20 V30 V
Rds On (Max) @ Id, Vgs115mOhm @ 2.4A, 4.5V32mOhm @ 4A, 4.5V115mOhm @ 2.4A, 4.5V42mOhm @ 3.8A, 10V
Series-TrenchFET®-TrenchFET®

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