SI1926DL-T1-GE3

MOSFET 2N-CH 60V 0.37A SOT363

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Specifications
Part Number:SI1926DL-T1-GE3
Manufacturer:Vishay / Siliconix
Description:MOSFET 2N-CH 60V 0.37A SOT363
RoHs Status:
Nkesp Part Number:73D-SI1926DL-T1-GE3
Part Status97851 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:2.5V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SC-70-6
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:1.4Ohm @ 340mA, 10V
Power - Max:510mW
Package / Case:6-TSSOP, SC-88, SOT-363
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:18.5pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:1.4nC @ 10V
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:370mA
Configuration:2 N-Channel (Dual)
Base Product Number:SI1926
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In stock: 97851 pcs

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Data sheet

Product Comparison

Part Number SI1926DL-T1-GE3
SI1926DL-T1-GE3
SI1965DH-T1-GE3
SI1965DH-T1-GE3
SI1965DH-T1-E3
SI1965DH-T1-E3
SI1958DH-T1-E3
SI1958DH-T1-E3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Power - Max510mW1.25W1.25W1.25W
Drain to Source Voltage (Vdss)60V12V12V20V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds18.5pF @ 30V120pF @ 6V120pF @ 6V105pF @ 10V
Package / Case6-TSSOP, SC-88, SOT-3636-TSSOP, SC-88, SOT-3636-TSSOP, SC-88, SOT-3636-TSSOP, SC-88, SOT-363
Current - Continuous Drain (Id) @ 25°C370mA1.3A1.3A1.3A
Supplier Device PackageSC-70-6SC-70-6SC-70-6SC-70-6
FET FeatureLogic Level GateLogic Level GateLogic Level GateLogic Level Gate
Vgs(th) (Max) @ Id2.5V @ 250µA1V @ 250µA1V @ 250µA1.6V @ 250µA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
SeriesTrenchFET®TrenchFET®TrenchFET®TrenchFET®
Configuration2 N-Channel (Dual)2 P-Channel (Dual)2 P-Channel (Dual)2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs1.4nC @ 10V4.2nC @ 8V4.2nC @ 8V3.8nC @ 10V
Base Product NumberSI1926SI1965SI1965SI1958
Rds On (Max) @ Id, Vgs1.4Ohm @ 340mA, 10V390mOhm @ 1A, 4.5V390mOhm @ 1A, 4.5V205mOhm @ 1.3A, 4.5V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)

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