SCT2080KEC

SICFET N-CH 1200V 40A TO247

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Specifications
Part Number:SCT2080KEC
Manufacturer:LAPIS Technology
Description:SICFET N-CH 1200V 40A TO247
RoHs Status:
Nkesp Part Number:73D-SCT2080KEC
Part Status3605 pcs
Manufacturer:LAPIS Technology
Vgs(th) (Max) @ Id:4V @ 4.4mA
Vgs (Max):+22V, -6V
Technology:SiCFET (Silicon Carbide)
Supplier Device Package:TO-247
Series:-
Rds On (Max) @ Id, Vgs:117mOhm @ 10A, 18V
Power Dissipation (Max):262W (Tc)
Package / Case:TO-247-3
Package:Tube
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:2080 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs:106 nC @ 18 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):18V
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Base Product Number:SCT2080
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In stock: 3605 pcs

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Data sheet

Product Comparison

Part Number SCT2080KEC
SCT2080KEC
SCT2280KEHRC11
SCT2280KEHRC11
SCT2080KEHRC11
SCT2080KEHRC11
SCT040H65G3AG
SCT040H65G3AG
ManufacturerRohm SemiconductorRohm SemiconductorRohm SemiconductorSTMicroelectronics
Input Capacitance (Ciss) (Max) @ Vds2080 pF @ 800 V667 pF @ 800 V2080 pF @ 800 V920 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)18V18V18V15V, 18V
Vgs (Max)+22V, -6V+22V, -6V+22V, -6V+18V, -5V
Package / CaseTO-247-3TO-247-3TO-247-3TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting TypeThrough HoleThrough HoleThrough HoleSurface Mount
PackageTubeTubeTubeTape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs106 nC @ 18 V36 nC @ 400 V106 nC @ 18 V39.5 nC @ 18 V
Power Dissipation (Max)262W (Tc)108W (Tc)-221W (Tc)
Supplier Device PackageTO-247TO-247NTO-247NH2PAK-7
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
FET Feature----
Base Product NumberSCT2080SCT2280SCT2080SCT040
Operating Temperature175°C (TJ)175°C (TJ)175°C (TJ)-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs117mOhm @ 10A, 18V364mOhm @ 4A, 18V117mOhm @ 10A, 18V55mOhm @ 20A, 18V
Vgs(th) (Max) @ Id4V @ 4.4mA4V @ 1.4mA4V @ 4.4mA4.2V @ 1mA
Drain to Source Voltage (Vdss)1200 V1200 V1200 V650 V
Series-Automotive, AEC-Q101Automotive, AEC-Q101Automotive, AEC-Q101
TechnologySiCFET (Silicon Carbide)SiCFET (Silicon Carbide)SiCFET (Silicon Carbide)SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C40A (Tc)14A (Tc)40A (Tc)30A (Tc)

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