S2M0040120D

MOSFET SILICON CARBIDE SIC 1200V

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RFQ
Specifications
Part Number:S2M0040120D
Manufacturer:Sangdest Microelectronics / Nanjing (SMC Diode Solutions)
Description:MOSFET SILICON CARBIDE SIC 1200V
RoHs Status:
Nkesp Part Number:73D-S2M0040120D
Part Status23818 pcs
Manufacturer:Sangdest Microelectronics / Nanjing (SMC Diode Solutions)
Vgs(th) (Max) @ Id:-
Vgs (Max):-
Technology:SiCFET (Silicon Carbide)
Supplier Device Package:TO-247-3
Series:-
Rds On (Max) @ Id, Vgs:-
Power Dissipation (Max):-
Package / Case:TO-247-3
Package:Tube
Operating Temperature:-
Mounting Type:Through Hole
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):-
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:-

In stock: 23818 pcs

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Product Comparison

Part Number S2M0040120D
S2M0040120D
IRFP344PBF
IRFP344PBF
NP90N06VLG-E1-AY
NP90N06VLG-E1-AY
CSD18531Q5A
CSD18531Q5A
ManufacturerSMC Diode SolutionsVishay SiliconixRenesas Electronics America IncN/A
Rds On (Max) @ Id, Vgs-630mOhm @ 5.7A, 10V7.8mOhm @ 45A, 10V4.6mOhm @ 22A, 10V
Power Dissipation (Max)-150W (Tc)1.2W (Ta), 105W (Tc)3.1W (Ta), 156W (Tc)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Operating Temperature--55°C ~ 150°C (TJ)175°C (TJ)-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)1200 V450 V60 V60 V
FET Feature----
Drive Voltage (Max Rds On, Min Rds On)-10V4.5V, 10V4.5V, 10V
TechnologySiCFET (Silicon Carbide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
PackageTubeTubeTape & Reel (TR)Tape & Reel (TR)
Package / CaseTO-247-3TO-247-3TO-252-3, DPak (2 Leads + Tab), SC-638-PowerTDFN
Vgs (Max)-±20V±20V±20V
Supplier Device PackageTO-247-3TO-247ACTO-2528-VSONP (5x6)
Series---NexFET™
Mounting TypeThrough HoleThrough HoleSurface MountSurface Mount
Current - Continuous Drain (Id) @ 25°C-9.5A (Tc)90A (Tc)19A (Ta), 100A (Tc)
Vgs(th) (Max) @ Id-4V @ 250µA2.5V @ 250µA2.3V @ 250µA

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