RTQ045N03TR

MOSFET N-CH 30V 4.5A TSMT6

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RFQ
Specifications
Part Number:RTQ045N03TR
Manufacturer:LAPIS Technology
Description:MOSFET N-CH 30V 4.5A TSMT6
RoHs Status:
Nkesp Part Number:73D-RTQ045N03TR
Part Status58617 pcs
Manufacturer:LAPIS Technology
Vgs(th) (Max) @ Id:1.5V @ 1mA
Vgs (Max):±12V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TSMT6 (SC-95)
Series:-
Rds On (Max) @ Id, Vgs:43mOhm @ 4.5A, 4.5V
Power Dissipation (Max):1.25W (Ta)
Package / Case:SOT-23-6 Thin, TSOT-23-6
Package:Tape & Reel (TR)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs:10.7 nC @ 4.5 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
Base Product Number:RTQ045
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In stock: 58617 pcs

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Data sheet

Product Comparison

Part Number RTQ045N03TR
RTQ045N03TR
HUF76419D3
HUF76419D3
RTQ030P02TR
RTQ030P02TR
IRLIZ44NPBF
IRLIZ44NPBF
ManufacturerRohm SemiconductoronsemiRohm SemiconductorInfineon Technologies
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V4.5V, 10V2.5V, 4.5V4V, 10V
Power Dissipation (Max)1.25W (Ta)75W (Tc)1.25W (Ta)45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds540 pF @ 10 V900 pF @ 25 V800 pF @ 10 V1700 pF @ 25 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Package / CaseSOT-23-6 Thin, TSOT-23-6TO-251-3 Short Leads, IPak, TO-251AASOT-23-6 Thin, TSOT-23-6TO-220-3 Full Pack
Vgs (Max)±12V±16V±12V±16V
Rds On (Max) @ Id, Vgs43mOhm @ 4.5A, 4.5V37mOhm @ 20A, 10V80mOhm @ 3A, 4.5V22mOhm @ 17A, 10V
PackageTape & Reel (TR)TubeTape & Reel (TR)Tube
Gate Charge (Qg) (Max) @ Vgs10.7 nC @ 4.5 V27.5 nC @ 10 V9 nC @ 4.5 V48 nC @ 5 V
Vgs(th) (Max) @ Id1.5V @ 1mA3V @ 250µA2V @ 1mA2V @ 250µA
Base Product NumberRTQ045HUF76RTQ030-
Supplier Device PackageTSMT6 (SC-95)I-PAKTSMT6 (SC-95)TO-220AB Full-Pak
Operating Temperature150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)-55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)20A (Tc)3A (Ta)30A (Tc)
Drain to Source Voltage (Vdss)30 V60 V20 V55 V
Series-UltraFET™-HEXFET®
FET Feature----
FET TypeN-ChannelN-ChannelP-ChannelN-Channel
Mounting TypeSurface MountThrough HoleSurface MountThrough Hole

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