RSH100N03TB1

MOSFET N-CH 30V 10A 8SOP

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Specifications
Part Number:RSH100N03TB1
Manufacturer:Rohm Semiconductor
Description:MOSFET N-CH 30V 10A 8SOP
RoHs Status:
Nkesp Part Number:73D-RSH100N03TB1
Part Status37300 pcs
Manufacturer:Rohm Semiconductor
Vgs(th) (Max) @ Id:2.5V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOP
Series:-
Rds On (Max) @ Id, Vgs:13.3mOhm @ 10A, 10V
Power Dissipation (Max):2W (Ta)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Package:Tape & Reel (TR)
Operating Temperature:-
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1070 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 5 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Base Product Number:RSH100

In stock: 37300 pcs

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Product Comparison

Part Number RSH100N03TB1
RSH100N03TB1
NTD4860N-35G
NTD4860N-35G
STN3PF06
STN3PF06
RSH090N03TB1
RSH090N03TB1
ManufacturerRohm SemiconductoronsemiSTMicroelectronicsRohm Semiconductor
Input Capacitance (Ciss) (Max) @ Vds1070 pF @ 10 V1308 pF @ 12 V850 pF @ 25 V810 pF @ 10 V
Current - Continuous Drain (Id) @ 25°C10A (Ta)10.4A (Ta), 65A (Tc)2.5A (Tc)9A (Ta)
Vgs(th) (Max) @ Id2.5V @ 1mA2.5V @ 250µA4V @ 250µA2.5V @ 1mA
Series--STripFET™ II-
Operating Temperature--55°C ~ 175°C (TJ)-65°C ~ 150°C (TJ)150°C
PackageTape & Reel (TR)TubeTape & Reel (TR)Tape & Reel (TR)
Base Product NumberRSH100NTD48STN3PRSH090
FET TypeN-ChannelN-ChannelP-ChannelN-Channel
Mounting TypeSurface MountThrough HoleSurface MountSurface Mount
Drive Voltage (Max Rds On, Min Rds On)4V, 10V4.5V, 10V10V4V, 10V
Rds On (Max) @ Id, Vgs13.3mOhm @ 10A, 10V7.5mOhm @ 30A, 10V220mOhm @ 1.5A, 10V16mOhm @ 9A, 10V
Power Dissipation (Max)2W (Ta)1.28W (Ta), 50W (Tc)2.5W (Tc)2W (Ta)
Vgs (Max)±20V±20V±20V20V
Supplier Device Package8-SOPI-PakSOT-2238-SOP
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Package / Case8-SOIC (0.154", 3.90mm Width)TO-251-3 Stub Leads, IPakTO-261-4, TO-261AA8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss)30 V25 V60 V30 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 5 V16.5 nC @ 4.5 V21 nC @ 10 V15 nC @ 5 V
FET Feature----

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