RSD080N06TL

MOSFET N-CH 60V 8A CPT3

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Specifications
Part Number:RSD080N06TL
Manufacturer:LAPIS Technology
Description:MOSFET N-CH 60V 8A CPT3
RoHs Status:
Nkesp Part Number:73D-RSD080N06TL
Part Status27791 pcs
Manufacturer:LAPIS Technology
Vgs(th) (Max) @ Id:2.5V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:CPT3
Series:-
Rds On (Max) @ Id, Vgs:80mOhm @ 8A, 10V
Power Dissipation (Max):15W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Tape & Reel (TR)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
Base Product Number:RSD080

In stock: 27791 pcs

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Product Comparison

Part Number RSD080N06TL
RSD080N06TL
RSD131P10TL
RSD131P10TL
RSD220N06TL
RSD220N06TL
IRL2505STRLPBF
IRL2505STRLPBF
ManufacturerRohm SemiconductorRohm SemiconductorRohm SemiconductorInfineon Technologies
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds380 pF @ 10 V2400 pF @ 25 V-5000 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C8A (Ta)13A (Tc)22A (Ta)104A (Tc)
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs80mOhm @ 8A, 10V200mOhm @ 6.5A, 10V-8mOhm @ 54A, 10V
Base Product NumberRSD080RSD131RSD220IRL2505
Supplier Device PackageCPT3CPT3CPT3D2PAK
Vgs (Max)±20V±20V±20V±16V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V4V, 10V4V, 10V4V, 10V
Series---HEXFET®
Vgs(th) (Max) @ Id2.5V @ 1mA2.5V @ 1mA-2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.4 nC @ 10 V40 nC @ 10 V-130 nC @ 5 V
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max)15W (Tc)850mW (Ta), 20W (Tc)20W (Ta)3.8W (Ta), 200W (Tc)
FET Feature----
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Drain to Source Voltage (Vdss)60 V100 V60 V55 V
FET TypeN-ChannelP-ChannelN-ChannelN-Channel

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