RS3P070ATTB1

PCH -100V -7A POWER MOSFET: RS3P

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Specifications
Part Number:RS3P070ATTB1
Manufacturer:LAPIS Technology
Description:PCH -100V -7A POWER MOSFET: RS3P
RoHs Status:
Nkesp Part Number:73D-RS3P070ATTB1
Part Status18714 pcs
Manufacturer:LAPIS Technology
Vgs(th) (Max) @ Id:2.5V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOP
Series:-
Rds On (Max) @ Id, Vgs:36mOhm @ 7A, 10V
Power Dissipation (Max):2W (Ta)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Package:Tape & Reel (TR)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:5150 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs:115 nC @ 10 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:7A (Ta)
Base Product Number:RS3P070

In stock: 18714 pcs

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Rohm Semiconductor
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Product Comparison

Part Number RS3P070ATTB1
RS3P070ATTB1
BUK6212-40C,118
BUK6212-40C,118
FDA28N50F
FDA28N50F
RS3E135BNGZETB
RS3E135BNGZETB
ManufacturerRohm SemiconductorNXP USA Inc.onsemiRohm Semiconductor
PackageTape & Reel (TR)BulkTubeTape & Reel (TR)
Vgs (Max)±20V±16V±30V±20V
Gate Charge (Qg) (Max) @ Vgs115 nC @ 10 V33.9 nC @ 10 V105 nC @ 10 V8.3 nC @ 4.5 V
Series-Automotive, AEC-Q101, TrenchMOS™UniFET™-
Power Dissipation (Max)2W (Ta)80W310W (Tc)2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds5150 pF @ 50 V1900 pF @ 25 V5387 pF @ 25 V680 pF @ 15 V
FET Feature----
Vgs(th) (Max) @ Id2.5V @ 1mA2.8V @ 1mA5V @ 250µA2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C7A (Ta)50A (Ta)28A (Tc)9.5A (Ta)
Supplier Device Package8-SOPDPAKTO-3PN8-SOP
Package / Case8-SOIC (0.154", 3.90mm Width)TO-252-3, DPak (2 Leads + Tab), SC-63TO-3P-3, SC-65-38-SOIC (0.154", 3.90mm Width)
Base Product NumberRS3P070-FDA28RS3E
Operating Temperature150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
FET TypeP-ChannelN-ChannelN-ChannelN-Channel
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V-10V10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs36mOhm @ 7A, 10V11.2mOhm @ 12A, 10V175mOhm @ 14A, 10V14.6mOhm @ 9.5A, 10V
Mounting TypeSurface MountSurface MountThrough HoleSurface Mount
Drain to Source Voltage (Vdss)100 V40 V500 V30 V

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