RS1E200GNTB

MOSFET N-CH 30V 20A 8HSOP

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Specifications
Part Number:RS1E200GNTB
Manufacturer:LAPIS Technology
Description:MOSFET N-CH 30V 20A 8HSOP
RoHs Status:
Nkesp Part Number:73D-RS1E200GNTB
Part Status48229 pcs
Manufacturer:LAPIS Technology
Vgs(th) (Max) @ Id:2.5V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-HSOP
Series:-
Rds On (Max) @ Id, Vgs:4.6mOhm @ 20A, 10V
Power Dissipation (Max):3W (Ta), 25.1W (Tc)
Package / Case:8-PowerTDFN
Package:Tape & Reel (TR)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1080 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:16.8 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Base Product Number:RS1E
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In stock: 48229 pcs

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Rohm Semiconductor
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Data sheet

Product Comparison

Part Number RS1E200GNTB
RS1E200GNTB
RS1E170GNTB
RS1E170GNTB
RS1E150GNTB
RS1E150GNTB
RS1E180BNTB
RS1E180BNTB
ManufacturerRohm SemiconductorRohm SemiconductorRohm SemiconductorRohm Semiconductor
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Series----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds1080 pF @ 15 V720 pF @ 15 V590 pF @ 15 V2400 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C20A (Ta)17A (Ta), 40A (Tc)15A (Ta)60A (Tc)
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Vgs (Max)±20V±20V±20V±20V
Drain to Source Voltage (Vdss)30 V30 V30 V30 V
Gate Charge (Qg) (Max) @ Vgs16.8 nC @ 10 V12 nC @ 10 V10 nC @ 10 V46 nC @ 10 V
Vgs(th) (Max) @ Id2.5V @ 1mA2.5V @ 1mA2.5V @ 1mA2.5V @ 1mA
Power Dissipation (Max)3W (Ta), 25.1W (Tc)3W (Ta), 23W (Tc)3W (Ta), 22.9W (Tc)3W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs4.6mOhm @ 20A, 10V6.7mOhm @ 17A, 10V8.8mOhm @ 15A, 10V4.9mOhm @ 18A, 10V
Base Product NumberRS1ERS1ERS1ERS1E
Supplier Device Package8-HSOP8-HSOP8-HSOPCPT3
Package / Case8-PowerTDFN8-PowerTDFN8-PowerTDFNTO-252-3, DPak (2 Leads + Tab), SC-63
FET Feature----

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