RQ6C050BCTCR

MOSFET P-CH 20V 5A TSMT6

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RFQ
Specifications
Part Number:RQ6C050BCTCR
Manufacturer:LAPIS Technology
Description:MOSFET P-CH 20V 5A TSMT6
RoHs Status:
Nkesp Part Number:73D-RQ6C050BCTCR
Part Status47122 pcs
Manufacturer:LAPIS Technology
Vgs(th) (Max) @ Id:1.2V @ 1mA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TSMT6 (SC-95)
Series:-
Rds On (Max) @ Id, Vgs:36mOhm @ 5A, 4.5V
Power Dissipation (Max):1.25W (Tc)
Package / Case:SOT-23-6 Thin, TSOT-23-6
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs:10.4 nC @ 4.5 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Base Product Number:RQ6C050
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In stock: 47122 pcs

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Data sheet

Product Comparison

Part Number RQ6C050BCTCR
RQ6C050BCTCR
RQ6C065BCTCR
RQ6C065BCTCR
RQ6E050AJTCR
RQ6E050AJTCR
RQ6E080AJTCR
RQ6E080AJTCR
ManufacturerRohm SemiconductorRohm SemiconductorRohm SemiconductorRohm Semiconductor
Power Dissipation (Max)1.25W (Tc)1.25W (Tc)950mW (Ta)950mW (Ta)
Current - Continuous Drain (Id) @ 25°C5A (Tc)6.5A (Tc)5A (Ta)8A (Ta)
FET TypeP-ChannelP-ChannelN-ChannelN-Channel
Vgs(th) (Max) @ Id1.2V @ 1mA1.2V @ 1mA1.5V @ 1mA1.5V @ 2mA
Rds On (Max) @ Id, Vgs36mOhm @ 5A, 4.5V21mOhm @ 6.5A, 4.5V35mOhm @ 5A, 4.5V16.5mOhm @ 8A, 4.5V
Base Product NumberRQ6C050RQ6C065RQ6E050RQ6E080
Package / CaseSOT-23-6 Thin, TSOT-23-6SOT-23-6 Thin, TSOT-23-6SOT-23-6 Thin, TSOT-23-6SOT-23-6 Thin, TSOT-23-6
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)150°C (TJ)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Supplier Device PackageTSMT6 (SC-95)TSMT6 (SC-95)TSMT6 (SC-95)TSMT6 (SC-95)
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Drain to Source Voltage (Vdss)20 V20 V30 V30 V
Vgs (Max)±8V±8V±12V±12V
FET Feature----
Input Capacitance (Ciss) (Max) @ Vds740 pF @ 10 V1520 pF @ 10 V520 pF @ 15 V1810 pF @ 15 V
Series----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs10.4 nC @ 4.5 V22 nC @ 4.5 V4.7 nC @ 4.5 V16.2 nC @ 4.5 V
Drive Voltage (Max Rds On, Min Rds On)4.5V4.5V2.5V, 4.5V2.5V, 4.5V

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