RM90N40DF

MOSFET N-CHANNEL 40V 90A 8DFN

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RFQ
Specifications
Part Number:RM90N40DF
Manufacturer:Rectron USA
Description:MOSFET N-CHANNEL 40V 90A 8DFN
RoHs Status:
Nkesp Part Number:73D-RM90N40DF
Part Status41035 pcs
Manufacturer:Rectron USA
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-DFN (5x6)
Series:-
Rds On (Max) @ Id, Vgs:4mOhm @ 20A, 10V
Power Dissipation (Max):65W (Tc)
Package / Case:8-PowerVDFN
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:5400 pF @ 20 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
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In stock: 41035 pcs

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Data sheet

Product Comparison

Part Number RM90N40DF
RM90N40DF
DMP21D5UFB4-7B
DMP21D5UFB4-7B
SPP21N50C3XKSA1
SPP21N50C3XKSA1
NVD6828NLT4G-VF01
NVD6828NLT4G-VF01
ManufacturerRectron USADiodes IncorporatedInfineon Technologiesonsemi
Input Capacitance (Ciss) (Max) @ Vds5400 pF @ 20 V46.1 pF @ 10 V2400 pF @ 25 V-
Vgs(th) (Max) @ Id2.5V @ 250µA1V @ 250µA3.9V @ 1mA-
Supplier Device Package8-DFN (5x6)X2-DFN1006-3PG-TO220-3-1-
Package / Case8-PowerVDFN3-XFDFNTO-220-3-
Power Dissipation (Max)65W (Tc)460mW (Ta)208W (Tc)-
Drain to Source Voltage (Vdss)40 V20 V500 V-
Rds On (Max) @ Id, Vgs4mOhm @ 20A, 10V970mOhm @ 100mA, 5V190mOhm @ 13.1A, 10V-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V1.2V, 5V10V-
Vgs (Max)±20V±8V±20V-
FET Feature----
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-
Current - Continuous Drain (Id) @ 25°C90A (Tc)700mA (Ta)21A (Tc)-
FET TypeN-ChannelP-ChannelN-Channel-
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)-
PackageTape & Reel (TR)Tape & Reel (TR)TubeTape & Reel (TR)
Mounting TypeSurface MountSurface MountThrough Hole-
Series--CoolMOS™*

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