RK7002BT116

MOSFET N-CH 60V 250MA SST3

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Specifications
Part Number:RK7002BT116
Manufacturer:LAPIS Technology
Description:MOSFET N-CH 60V 250MA SST3
RoHs Status:
Nkesp Part Number:73D-RK7002BT116
Part Status312655 pcs
Manufacturer:LAPIS Technology
Vgs(th) (Max) @ Id:2.3V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SST3
Series:-
Rds On (Max) @ Id, Vgs:2.4Ohm @ 250mA, 10V
Power Dissipation (Max):200mW (Ta)
Package / Case:TO-236-3, SC-59, SOT-23-3
Package:Tape & Reel (TR)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:15 pF @ 25 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:250mA (Ta)
Base Product Number:RK7002
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In stock: 312655 pcs

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Data sheet

Product Comparison

Part Number RK7002BT116
RK7002BT116
RM1A5N30S3AE
RM1A5N30S3AE
IRLL024ZTRPBF
IRLL024ZTRPBF
BUK7225-55A,118
BUK7225-55A,118
ManufacturerRohm SemiconductorRectron USAInfineon TechnologiesNXP Semiconductors
Current - Continuous Drain (Id) @ 25°C250mA (Ta)1.5A (Ta), 1.4A (Tc)5A (Tc)43A (Ta)
Package / CaseTO-236-3, SC-59, SOT-23-3SC-70, SOT-323TO-261-4, TO-261AATO-252-3, DPak (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V2.5V, 4.5V4.5V, 10V10V
Vgs (Max)±20V±10V±16V±20V
Rds On (Max) @ Id, Vgs2.4Ohm @ 250mA, 10V144mOhm @ 1A, 4.5V60mOhm @ 3A, 10V25mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.3V @ 1mA1.5V @ 250µA3V @ 250µA4V @ 1mA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Drain to Source Voltage (Vdss)60 V30 V55 V55 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Supplier Device PackageSST3SOT-323SOT-223DPAK
FET Feature----
Base Product NumberRK7002-IRLL024-
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Bulk
Input Capacitance (Ciss) (Max) @ Vds15 pF @ 25 V105 pF @ 15 V380 pF @ 25 V1310 pF @ 25 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Power Dissipation (Max)200mW (Ta)400mW (Ta), 500mW (Tc)1W (Ta)94W (Ta)
Series--HEXFET®-
Operating Temperature150°C (TJ)-50°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)

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