RFB18N10CS

MOSFET N-CH 100V 18A TO220AB-5

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Specifications
Part Number:RFB18N10CS
Manufacturer:Harris Corporation
Description:MOSFET N-CH 100V 18A TO220AB-5
Nkesp Part Number:73D-RFB18N10CS
Part Status11241 pcs
Manufacturer:Harris Corporation
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB-5
Series:-
Rds On (Max) @ Id, Vgs:100mOhm @ 9A, 10V
Power Dissipation (Max):79W (Tc)
Package / Case:TO-220-5
Package:Bulk
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
FET Type:N-Channel
FET Feature:Current Sensing
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)

In stock: 11241 pcs

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Product Comparison

Part Number RFB18N10CS
RFB18N10CS
RFP50N06_NL
RFP50N06_NL
SIR108DP-T1-RE3
SIR108DP-T1-RE3
RJK1560DPP-M0#T2
RJK1560DPP-M0#T2
ManufacturerHarris CorporationFairchild SemiconductorVishay SiliconixRenesas Electronics America Inc
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V150 nC @ 20 V41.5 nC @ 10 V52 nC @ 4 V
Package / CaseTO-220-5TO-220-3PowerPAK® SO-8TO-220-3 Full Pack
Power Dissipation (Max)79W (Tc)131W (Tc)5W (Ta), 65.7W (Tc)28.5W (Tc)
FET FeatureCurrent Sensing---
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Series--TrenchFET® Gen IV-
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V60 V100 V150 V
Mounting TypeThrough HoleThrough HoleSurface MountThrough Hole
PackageBulkBulkTape & Reel (TR)Tube
Rds On (Max) @ Id, Vgs100mOhm @ 9A, 10V22mOhm @ 50A, 10V13.5mOhm @ 10A, 10V60mOhm @ 10A, 4V
Supplier Device PackageTO-220AB-5TO-220-3PowerPAK® SO-8TO-220FL
Current - Continuous Drain (Id) @ 25°C18A (Tc)50A (Tc)12.4A (Ta), 45A (Tc)20A (Ta)
Vgs (Max)±20V±20V±20V-
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA3.6V @ 250µA-

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