RF4E110BNTR

MOSFET N-CH 30V 11A HUML2020L8

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Specifications
Part Number:RF4E110BNTR
Manufacturer:Rohm Semiconductor
Description:MOSFET N-CH 30V 11A HUML2020L8
RoHs Status:
Nkesp Part Number:73D-RF4E110BNTR
Part Status61527 pcs
Manufacturer:Rohm Semiconductor
Vgs(th) (Max) @ Id:2V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:HUML2020L8
Series:-
Rds On (Max) @ Id, Vgs:11.1mOhm @ 11A, 10V
Power Dissipation (Max):2W (Ta)
Package / Case:8-PowerUDFN
Package:Tape & Reel (TR)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Base Product Number:RF4E110
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In stock: 61527 pcs

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Data sheet

Product Comparison

Part Number RF4E110BNTR
RF4E110BNTR
RF4E075ATTCR
RF4E075ATTCR
RF4P060BGTCR
RF4P060BGTCR
RF4L055GNTCR
RF4L055GNTCR
ManufacturerRohm SemiconductorRohm SemiconductorRohm SemiconductorRohm Semiconductor
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Vgs (Max)±20V±20V±20V±20V
FET TypeN-ChannelP-ChannelN-ChannelN-Channel
Rds On (Max) @ Id, Vgs11.1mOhm @ 11A, 10V21.7mOhm @ 7.5A, 10V53mOhm @ 6A, 10V43mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id2V @ 250µA2.5V @ 1mA2.5V @ 1mA2.7V @ 1mA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
Package / Case8-PowerUDFN8-PowerUDFN8-PowerUDFN8-PowerUDFN
Series----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Power Dissipation (Max)2W (Ta)2W (Ta)2W (Ta)2W (Ta)
Base Product NumberRF4E110RF4E075RF4P060RF4L055
FET Feature----
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 15 V1000 pF @ 15 V305 pF @ 50 V400 pF @ 30 V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Supplier Device PackageHUML2020L8HUML2020L8DFN2020-8SHUML2020L8
Current - Continuous Drain (Id) @ 25°C11A (Ta)7.5A (Ta)6A (Ta)5.5A (Ta)
Drain to Source Voltage (Vdss)30 V30 V100 V60 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V22 nC @ 10 V6.7 nC @ 10 V7.8 nC @ 10 V

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