R6520ENZC8

MOSFET N-CH 650V 20A TO3

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RFQ
Specifications
Part Number:R6520ENZC8
Manufacturer:LAPIS Technology
Description:MOSFET N-CH 650V 20A TO3
RoHs Status:
Nkesp Part Number:73D-R6520ENZC8
Part Status4125 pcs
Manufacturer:LAPIS Technology
Vgs(th) (Max) @ Id:4V @ 630µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-3PF
Series:-
Rds On (Max) @ Id, Vgs:205mOhm @ 9.5A, 10V
Power Dissipation (Max):68W (Tc)
Package / Case:TO-3P-3 Full Pack
Package:Tube
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:61 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Base Product Number:R6520
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In stock: 4125 pcs

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Data sheet

Product Comparison

Part Number R6520ENZC8
R6520ENZC8
R6515KNJTL
R6515KNJTL
R6515ENZC8
R6515ENZC8
R6520ENZC17
R6520ENZC17
ManufacturerRohm SemiconductorRohm SemiconductorRohm SemiconductorRohm Semiconductor
Gate Charge (Qg) (Max) @ Vgs61 nC @ 10 V27.5 nC @ 10 V40 nC @ 10 V61 nC @ 10 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V650 V650 V650 V
Vgs (Max)±20V±20V±20V±20V
Rds On (Max) @ Id, Vgs205mOhm @ 9.5A, 10V315mOhm @ 6.5A, 10V315mOhm @ 6.5A, 10V205mOhm @ 9.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 25 V1050 pF @ 25 V910 pF @ 25 V1400 pF @ 25 V
Vgs(th) (Max) @ Id4V @ 630µA5V @ 430µA4V @ 430µA4V @ 630µA
Base Product NumberR6520R6515R6515R6520
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Series----
PackageTubeTape & Reel (TR)TubeTube
Current - Continuous Drain (Id) @ 25°C20A (Tc)15A (Tc)15A (Tc)20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Package / CaseTO-3P-3 Full PackTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-3P-3 Full PackTO-3P-3 Full Pack
Mounting TypeThrough HoleSurface MountThrough HoleThrough Hole
Supplier Device PackageTO-3PFLPTSTO-3PFTO-3PF
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
Power Dissipation (Max)68W (Tc)184W (Tc)60W (Tc)68W (Tc)
FET Feature----

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