R6035ENZ1C9

MOSFET N-CH 600V 35A TO247

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Specifications
Part Number:R6035ENZ1C9
Manufacturer:LAPIS Technology
Description:MOSFET N-CH 600V 35A TO247
RoHs Status:
Nkesp Part Number:73D-R6035ENZ1C9
Part Status3347 pcs
Manufacturer:LAPIS Technology
Vgs(th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-247
Series:-
Rds On (Max) @ Id, Vgs:102mOhm @ 18.1A, 10V
Power Dissipation (Max):120W (Tc)
Package / Case:TO-247-3
Package:Tube
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:2720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
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In stock: 3347 pcs

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Data sheet

Product Comparison

Part Number R6035ENZ1C9
R6035ENZ1C9
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R6035VNXC7G
R6035VNXC7G
R6035KNZ4C13
R6035KNZ4C13
ManufacturerRohm SemiconductorRohm SemiconductorRohm SemiconductorRohm Semiconductor
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Vgs (Max)±20V±20V±30V±20V
Package / CaseTO-247-3TO-247-3TO-220-3 Full PackTO-247-3
Rds On (Max) @ Id, Vgs102mOhm @ 18.1A, 10V102mOhm @ 18.1A, 10V114mOhm @ 8A, 15V102mOhm @ 18.1A, 10V
PackageTubeTubeTubeTube
Current - Continuous Drain (Id) @ 25°C35A (Tc)35A (Tc)17A (Tc)35A (Tc)
Power Dissipation (Max)120W (Tc)379W (Tc)81W (Tc)379W (Tc)
Series----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Operating Temperature150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)150°C (TJ)
FET Feature----
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Drain to Source Voltage (Vdss)600 V600 V600 V600 V
Input Capacitance (Ciss) (Max) @ Vds2720 pF @ 25 V3000 pF @ 25 V2400 pF @ 100 V3000 pF @ 25 V
Supplier Device PackageTO-247TO-247TO-220FMTO-247
Drive Voltage (Max Rds On, Min Rds On)10V10V10V, 15V10V
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V72 nC @ 10 V50 nC @ 10 V72 nC @ 10 V
Vgs(th) (Max) @ Id4V @ 1mA5V @ 1mA6.5V @ 1.1mA5V @ 1mA

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