QH8JB5TCR

-40V DUAL PCH+PCH SMALL SIGNAL M

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Specifications
Part Number:QH8JB5TCR
Manufacturer:LAPIS Technology
Description:-40V DUAL PCH+PCH SMALL SIGNAL M
RoHs Status:
Nkesp Part Number:73D-QH8JB5TCR
Part Status26904 pcs
Manufacturer:LAPIS Technology
Vgs(th) (Max) @ Id:2.5V @ 1mA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TSMT8
Series:-
Rds On (Max) @ Id, Vgs:41mOhm @ 5A, 10V
Power - Max:1.1W (Ta)
Package / Case:8-SMD, Flat Lead
Package:Tape & Reel (TR)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:920pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:17.2nC @ 10V
FET Feature:-
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Configuration:2 P-Channel (Dual)
Base Product Number:QH8JB5

In stock: 26904 pcs

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Product Comparison

Part Number QH8JB5TCR
QH8JB5TCR
QH8MA3TCR
QH8MA3TCR
QH8KB5TCR
QH8KB5TCR
QH8KC6TCR
QH8KC6TCR
ManufacturerRohm SemiconductorRohm SemiconductorRohm SemiconductorRohm Semiconductor
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs17.2nC @ 10V7.2nC @ 10V3.5nC @ 10V7.6nC @ 10V
Base Product NumberQH8JB5QH8MA3QH8KB5QH8KC6
Drain to Source Voltage (Vdss)40V30V40V60V
Power - Max1.1W (Ta)1.5W1.1W (Ta)1.1W (Ta)
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
Current - Continuous Drain (Id) @ 25°C5A (Ta)7A, 5.5A4.5A (Ta)5.5A (Ta)
Vgs(th) (Max) @ Id2.5V @ 1mA2.5V @ 1mA2.5V @ 1mA2.5V @ 1mA
FET Feature----
Series----
Rds On (Max) @ Id, Vgs41mOhm @ 5A, 10V29mOhm @ 7A, 10V44mOhm @ 4.5A, 10V30mOhm @ 5.5A, 10V
Configuration2 P-Channel (Dual)N and P-Channel2 N-Channel (Dual)2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds920pF @ 20V300pF @ 15V150pF @ 20V460pF @ 30V
Package / Case8-SMD, Flat Lead8-SMD, Flat Lead8-SMD, Flat Lead8-SMD, Flat Lead
Supplier Device PackageTSMT8TSMT8TSMT8TSMT8
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount

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