In stock: 3492 pcs
Part Number |
PMWD19UN,518
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SQJ992EP-T1_BE3
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IRFI4212H-117PXKMA1
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APTM50H14FT3G
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Manufacturer | NXP USA Inc. | Vishay Siliconix | Infineon Technologies | Microchip Technology | |
Input Capacitance (Ciss) (Max) @ Vds | 1478pF @ 10V | 446pF @ 30V | 490pF @ 50V | 3259pF @ 25V | |
Current - Continuous Drain (Id) @ 25°C | 5.6A | 15A (Tc) | 11A (Tc) | 26A | |
Gate Charge (Qg) (Max) @ Vgs | 28nC @ 5V | 12nC @ 10V | 18nC @ 10V | 72nC @ 10V | |
Configuration | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 4 N-Channel (Half Bridge) | |
Drain to Source Voltage (Vdss) | 30V | 60V | 100V | 500V | |
Base Product Number | PMWD19 | SQJ992 | IRFI4212 | APTM50 | |
Package | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Bulk | |
Series | TrenchMOS™ | Automotive, AEC-Q101, TrenchFET® | - | - | |
Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | |
Supplier Device Package | 8-TSSOP | PowerPAK® SO-8 Dual | TO-220-5 Full-Pak | SP3 | |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) | PowerPAK® SO-8 Dual | TO-220-5 Full Pack, Formed Leads | SP3 | |
Vgs(th) (Max) @ Id | 700mV @ 1mA | 2.5V @ 250µA | 5V @ 250µA | 5V @ 1mA | |
Power - Max | 2.3W | 34W (Tc) | 18W (Tc) | 208W | |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
Mounting Type | Surface Mount | Surface Mount | Through Hole | Chassis Mount | |
Rds On (Max) @ Id, Vgs | 23mOhm @ 3.5A, 4.5V | 56.2mOhm @ 3.7A, 10V | 72.5mOhm @ 6.6A, 10V | 168mOhm @ 13A, 10V | |
FET Feature | Logic Level Gate | - | - | - |
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