PJQ5850_R2_00001

40V DUAL N-CHANNEL ENHANCEMENT M

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Specifications
Part Number:PJQ5850_R2_00001
Manufacturer:Panjit International Inc.
Description:40V DUAL N-CHANNEL ENHANCEMENT M
RoHs Status:
Nkesp Part Number:73D-PJQ5850_R2_00001
Part Status69981 pcs
Manufacturer:Panjit International Inc.
Vgs(th) (Max) @ Id:2.5V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:DFN5060B-8
Series:-
Rds On (Max) @ Id, Vgs:33mOhm @ 8A, 10V
Power - Max:1.7W (Ta), 12W (Tc)
Package / Case:8-PowerTDFN
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:425pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:4.4nC @ 4.5V
FET Feature:-
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:5A (Ta), 14A (Tc)
Configuration:2 N-Channel (Dual)
Base Product Number:PJQ5850
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In stock: 69981 pcs

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Product Comparison

Part Number PJQ5850_R2_00001
PJQ5850_R2_00001
PJQ5848-AU_R2_000A1
PJQ5848-AU_R2_000A1
PJQ5846-AU_R2_000A1
PJQ5846-AU_R2_000A1
PJQ5850-AU_R2_000A1
PJQ5850-AU_R2_000A1
ManufacturerPanjit International Inc.Panjit International Inc.Panjit International Inc.Panjit International Inc.
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Series----
Supplier Device PackageDFN5060B-8DFN5060B-8DFN5060B-8DFN5060B-8
Configuration2 N-Channel (Dual)2 N-Channel (Dual)2 N-Channel (Dual)2 N-Channel (Dual)
Drain to Source Voltage (Vdss)40V40V40V40V
Rds On (Max) @ Id, Vgs33mOhm @ 8A, 10V12mOhm @ 12A, 10V10.5mOhm @ 8A, 10V33mOhm @ 8A, 10V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
FET Feature----
Power - Max1.7W (Ta), 12W (Tc)2W (Ta), 23.8W (Tc)2W (Ta), 38.5W (Tc)2W (Ta), 14.4W (Tc)
Current - Continuous Drain (Id) @ 25°C5A (Ta), 14A (Tc)8.6A (Ta), 30A (Tc)9.5A (Ta), 40A (Tc)5A (Ta), 14A (Tc)
Gate Charge (Qg) (Max) @ Vgs4.4nC @ 4.5V10nC @ 4.5V22nC @ 10V4.4nC @ 4.5V
Base Product NumberPJQ5850PJQ5848PJQ5846PJQ5850
Input Capacitance (Ciss) (Max) @ Vds425pF @ 25V1040pF @ 20V1258pF @ 25V425pF @ 25V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Package / Case8-PowerTDFN8-PowerTDFN8-PowerTDFN8-PowerTDFN
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA

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