PJQ2888_R1_00001

20V P-CHANNEL ENHANCEMENT MODE M

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Specifications
Part Number:PJQ2888_R1_00001
Manufacturer:PANJIT
Description:20V P-CHANNEL ENHANCEMENT MODE M
Nkesp Part Number:73D-PJQ2888_R1_00001
Part Status28735 pcs
Manufacturer:PANJIT
Vgs(th) (Max) @ Id:1V @ 250µA
Supplier Device Package:DFN2020-8
Rds On (Max) @ Id, Vgs:325mOhm @ 1.5A, 4.5V
Power - Max:1.25W (Ta)
Package / Case:8-WFDFN Exposed Pad
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:150pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:2.2nC @ 4.5V
FET Type:2 P-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)

In stock: 28735 pcs

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Product Comparison

Part Number PJQ2888_R1_00001
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ManufacturerPanjit International Inc.Panjit International Inc.Panjit International Inc.Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)4.2A (Ta)5.2A (Ta)3.2A (Ta)
Package / Case8-WFDFN Exposed Pad6-VDFN Exposed Pad6-VDFN Exposed Pad6-WDFN Exposed Pad
Drain to Source Voltage (Vdss)20V20V20V60 V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Input Capacitance (Ciss) (Max) @ Vds150pF @ 10V907pF @ 10V515pF @ 10V509 pF @ 15 V
Rds On (Max) @ Id, Vgs325mOhm @ 1.5A, 4.5V52mOhm @ 4.2A, 4.5V32mOhm @ 5.2A, 4.5V75mOhm @ 3.2A, 10V
FET Type2 P-Channel (Dual)--N-Channel
Gate Charge (Qg) (Max) @ Vgs2.2nC @ 4.5V24nC @ 4.5V6.3nC @ 4.5V9.3 nC @ 10 V
Supplier Device PackageDFN2020-8DFN2020-6LDFN2020-6LDFN2020B-6
Power - Max1.25W (Ta)1.5W (Ta)1.45W (Ta)-
Vgs(th) (Max) @ Id1V @ 250µA900mV @ 250µA900mV @ 250µA2.5V @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
FET FeatureStandard---

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