PJF5NA80_T0_00001

800V N-CHANNEL MOSFET

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Specifications
Part Number:PJF5NA80_T0_00001
Manufacturer:PANJIT
Description:800V N-CHANNEL MOSFET
Nkesp Part Number:73D-PJF5NA80_T0_00001
Part Status3527 pcs
Manufacturer:PANJIT
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:ITO-220AB
Rds On (Max) @ Id, Vgs:2.7Ohm @ 2.5A, 10V
Power Dissipation (Max):48W (Tc)
Package / Case:TO-220-3 Full Pack, Isolated Tab
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)

In stock: 3527 pcs

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Product Comparison

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ManufacturerPanjit International Inc.Panjit International Inc.Panjit International Inc.Panjit International Inc.
Input Capacitance (Ciss) (Max) @ Vds660 pF @ 25 V723 pF @ 25 V1013 pF @ 25 V491 pF @ 25 V
Package / CaseTO-220-3 Full Pack, Isolated TabTO-220-3 Full Pack, Isolated TabTO-220-3 Full Pack, Isolated TabTO-220-3 Full Pack, Isolated Tab
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V15.2 nC @ 10 V40 nC @ 10 V11 nC @ 10 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs2.7Ohm @ 2.5A, 10V1.2Ohm @ 3.5A, 10V290mOhm @ 6.5A, 10V1.55Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA4V @ 250µA4V @ 250µA
FET Feature----
Drain to Source Voltage (Vdss)800 V600 V600 V500 V
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Vgs (Max)±30V±30V±20V±30V
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Supplier Device PackageITO-220ABITO-220ABITO-220AB-FITO-220AB
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Power Dissipation (Max)48W (Tc)45W (Tc)60W (Tc)42W (Tc)
Current - Continuous Drain (Id) @ 25°C5A (Ta)7A (Ta)1.7A (Ta), 15A (Tc)5A (Ta)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel

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