PJE8412_R1_00001

30V N-CHANNEL ENHANCEMENT MODE M

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Part Number:PJE8412_R1_00001
Manufacturer:PANJIT
Description:30V N-CHANNEL ENHANCEMENT MODE M
RoHs Status:
Nkesp Part Number:73D-PJE8412_R1_00001
Part Status167193 pcs
Manufacturer:PANJIT
Vgs(th) (Max) @ Id:1.1V @ 250µA
Vgs (Max):±10V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-523
Series:-
Rds On (Max) @ Id, Vgs:1.2Ohm @ 350mA, 4.5V
Power Dissipation (Max):300mW (Ta)
Package / Case:SOT-523
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:34 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:0.87 nC @ 4.5 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:350mA (Ta)
Base Product Number:PJE8412
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In stock: 167193 pcs

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Product Comparison

Part Number PJE8412_R1_00001
PJE8412_R1_00001
AOD9N50
AOD9N50
PJE138K_R1_00001
PJE138K_R1_00001
SI4102DY-T1-GE3
SI4102DY-T1-GE3
ManufacturerPanjit International Inc.Alpha & Omega Semiconductor Inc.Panjit International Inc.Vishay Siliconix
Supplier Device PackageSOT-523TO-252 (DPAK)SOT-523 Flat Leads8-SOIC
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V10V2.5V, 10V6V, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Power Dissipation (Max)300mW (Ta)178W (Tc)223mW (Ta)2.4W (Ta), 4.8W (Tc)
Vgs(th) (Max) @ Id1.1V @ 250µA4.5V @ 250µA1.5V @ 250µA4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds34 pF @ 15 V1160 pF @ 25 V50 pF @ 25 V370 pF @ 50 V
Base Product NumberPJE8412AOD9PJE138SI4102
Drain to Source Voltage (Vdss)30 V500 V50 V100 V
Package / CaseSOT-523TO-252-3, DPak (2 Leads + Tab), SC-63SC-89, SOT-4908-SOIC (0.154", 3.90mm Width)
FET Feature----
Current - Continuous Drain (Id) @ 25°C350mA (Ta)9A (Tc)350mA (Ta)3.8A (Tc)
Vgs (Max)±10V±30V±20V±20V
Series---TrenchFET®
Operating Temperature-55°C ~ 150°C (TJ)-50°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs1.2Ohm @ 350mA, 4.5V860mOhm @ 4.5A, 10V1.6Ohm @ 500mA, 10V158mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs0.87 nC @ 4.5 V24 nC @ 10 V1 nC @ 4.5 V11 nC @ 10 V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
FET TypeN-ChannelN-ChannelN-ChannelN-Channel

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