PHM25NQ10T,518

MOSFET N-CH 100V 30.7A 8HVSON

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RFQ
Specifications
Part Number:PHM25NQ10T,518
Manufacturer:Freescale / NXP Semiconductors
Description:MOSFET N-CH 100V 30.7A 8HVSON
RoHs Status:
Lead free / RoHS Compliant
Nkesp Part Number:73D-PHM25NQ10T,518
Part Status4392 pcs
Manufacturer:Freescale / NXP Semiconductors
Vgs(th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-HVSON (6x5)
Series:TrenchMOS™
Rds On (Max) @ Id, Vgs:30 mOhm @ 10A, 10V
Power Dissipation (Max):62.5W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-VDFN Exposed Pad
Other Names:934057309518
PHM25NQ10T /T3
PHM25NQ10T /T3-ND
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1800pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:26.6nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 30.7A (Tc) 62.5W (Tc) Surface Mount 8-HVSON (6x5)
Current - Continuous Drain (Id) @ 25°C:30.7A (Tc)
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In stock: 4392 pcs

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Technology----
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Series-***
FET Feature----
Detailed Description----
Current - Continuous Drain (Id) @ 25°C----
Mounting Type----
Rds On (Max) @ Id, Vgs----
Input Capacitance (Ciss) (Max) @ Vds----
Drain to Source Voltage (Vdss)----

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