PHD21N06LT,118

MOSFET N-CH 55V 19A DPAK

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Specifications
Part Number:PHD21N06LT,118
Manufacturer:Freescale / NXP Semiconductors
Description:MOSFET N-CH 55V 19A DPAK
RoHs Status:
Lead free / RoHS Compliant
Nkesp Part Number:73D-PHD21N06LT,118
Part Status4722 pcs
Manufacturer:Freescale / NXP Semiconductors
Vgs(th) (Max) @ Id:2V @ 1mA
Vgs (Max):±15V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:DPAK
Series:TrenchMOS™
Rds On (Max) @ Id, Vgs:70 mOhm @ 10A, 10V
Power Dissipation (Max):56W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:934055349118
PHD21N06LT /T3
PHD21N06LT /T3-ND
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:650pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:9.4nC @ 5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Drain to Source Voltage (Vdss):55V
Detailed Description:N-Channel 55V 19A (Tc) 56W (Tc) Surface Mount DPAK
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
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In stock: 4722 pcs

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ManufacturerNexperia USA Inc.NXP Semiconductors / FreescaleNexperia USA Inc.NXP Semiconductors / Freescale
Current - Continuous Drain (Id) @ 25°C----
Power Dissipation (Max)----
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Drive Voltage (Max Rds On, Min Rds On)----
FET Feature----
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Series-***
Gate Charge (Qg) (Max) @ Vgs----
Input Capacitance (Ciss) (Max) @ Vds----
Rds On (Max) @ Id, Vgs----
Mounting Type----
Moisture Sensitivity Level (MSL)----
Vgs(th) (Max) @ Id----
Detailed Description----
Operating Temperature----
Technology----
Supplier Device Package----
Package / Case----
FET Type----

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