In stock: 3779 pcs
| Part Number |
PH5030AL,115
 |
PH5830DL,115
 |
G12P06K
 |
EPC8002ENGR
 |
|
|---|---|---|---|---|---|
| Manufacturer | Nexperia USA Inc. | NXP USA Inc. | Goford Semiconductor | EPC | |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | |
| FET Feature | - | - | - | N-Channel | |
| Technology | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 30 V | - | 60 V | - | |
| FET Type | N-Channel | - | P-Channel | - | |
| Current - Continuous Drain (Id) @ 25°C | 91A (Tc) | - | 12A (Tc) | 65V | |
| Mounting Type | Surface Mount | - | Surface Mount | Surface Mount | |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | - | 23 nC @ 10 V | 2.5V @ 250µA | |
| Power Dissipation (Max) | - | - | 27W (Tc) | - | |
| Package | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 1760 pF @ 12 V | - | 1108 pF @ 30 V | 0.14nC @ 5V | |
| Series | TrenchMOS™ | * | - | eGaN® | |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 15A, 10V | - | 75mOhm @ 6A, 10V | 2A (Ta) | |
| Supplier Device Package | LFPAK56, Power-SO8 | - | TO-252 | - | |
| Package / Case | SC-100, SOT-669 | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA | - | 3V @ 250µA | 530 mOhm @ 500mA, 5V |
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