P3M171K0F3

SICFET N-CH 1700V 5.5A TO-220F-3

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Specifications
Part Number:P3M171K0F3
Manufacturer:PN Junction Semiconductor
Description:SICFET N-CH 1700V 5.5A TO-220F-3
RoHs Status:
Nkesp Part Number:73D-P3M171K0F3
Part Status5245 pcs
Manufacturer:PN Junction Semiconductor
Vgs(th) (Max) @ Id:2.2V @ 2mA (Typ)
Vgs (Max):+19V, -8V
Technology:SiCFET (Silicon Carbide)
Supplier Device Package:TO-220F-2L
Series:P3M
Rds On (Max) @ Id, Vgs:1.4Ohm @ 2A, 15V
Power Dissipation (Max):51W
Package / Case:TO-220F-2
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):15V
Drain to Source Voltage (Vdss):1700 V
Current - Continuous Drain (Id) @ 25°C:5.5A
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In stock: 5245 pcs

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Product Comparison

Part Number P3M171K0F3
P3M171K0F3
P3M171K0T3
P3M171K0T3
P3M173K0K3
P3M173K0K3
P3M17040K3
P3M17040K3
ManufacturerPN Junction SemiconductorPN Junction SemiconductorPN Junction SemiconductorPN Junction Semiconductor
SeriesP3MP3MP3MP3M
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device PackageTO-220F-2LTO-220-2LTO-247-3LTO-247-3L
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
TechnologySiCFET (Silicon Carbide)SiCFET (Silicon Carbide)SiCFET (Silicon Carbide)SiCFET (Silicon Carbide)
Power Dissipation (Max)51W100W63W536W
Rds On (Max) @ Id, Vgs1.4Ohm @ 2A, 15V1.4Ohm @ 2A, 15V3.6Ohm @ 600mA, 15V60mOhm @ 50A, 15V
Drain to Source Voltage (Vdss)1700 V1700 V1700 V1700 V
Current - Continuous Drain (Id) @ 25°C5.5A6A4A73A
PackageTubeTubeTubeTube
Vgs (Max)+19V, -8V+19V, -8V+19V, -8V+19V, -8V
Vgs(th) (Max) @ Id2.2V @ 2mA (Typ)2.2V @ 2mA (Typ)2.2V @ 600µA (Typ)2.2V @ 50mA (Typ)
Package / CaseTO-220F-2TO-220-2TO-247-3TO-247-3
FET Feature----
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Drive Voltage (Max Rds On, Min Rds On)15V15V15V15V

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