NVTFS6H850NWFTAG

MOSFET N-CH 80V 11A/68A 8WDFN

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RFQ
Specifications
Part Number:NVTFS6H850NWFTAG
Manufacturer:onsemi
Description:MOSFET N-CH 80V 11A/68A 8WDFN
RoHs Status:
Nkesp Part Number:73D-NVTFS6H850NWFTAG
Part Status21810 pcs
Manufacturer:onsemi
Vgs(th) (Max) @ Id:4V @ 70µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-WDFN (3.3x3.3)
Series:Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:9.5mOhm @ 10A, 10V
Power Dissipation (Max):3.2W (Ta), 107W (Tc)
Package / Case:8-PowerWDFN
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1140 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 68A (Tc)
Base Product Number:NVTFS6
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In stock: 21810 pcs

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Data sheet

Product Comparison

Part Number NVTFS6H850NWFTAG
NVTFS6H850NWFTAG
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NVTFS5C670NLWFTAG
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Manufactureronsemionsemionsemionsemi
Vgs (Max)±20V±20V±20V±20V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Vgs(th) (Max) @ Id4V @ 70µA2V @ 250µA4V @ 30µA2V @ 250µA
SeriesAutomotive, AEC-Q101Automotive, AEC-Q101Automotive, AEC-Q101Automotive, AEC-Q101
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V20 nC @ 10 V8.7 nC @ 10 V20 nC @ 10 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Power Dissipation (Max)3.2W (Ta), 107W (Tc)3.2W (Ta), 63W (Tc)3.1W (Ta), 46W (Tc)3.2W (Ta), 63W (Tc)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Package / Case8-PowerWDFN8-PowerWDFN8-PowerWDFN8-PowerWDFN
Base Product NumberNVTFS6NVTFS5NVTFS6NVTFS5
Supplier Device Package8-WDFN (3.3x3.3)8-WDFN (3.3x3.3)8-WDFN (3.3x3.3)8-WDFN (3.3x3.3)
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C11A (Ta), 68A (Tc)16A (Ta), 70A (Tc)8A (Ta), 30A (Tc)16A (Ta), 70A (Tc)
Drain to Source Voltage (Vdss)80 V60 V80 V60 V
Drive Voltage (Max Rds On, Min Rds On)10V4.5V, 10V10V4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds1140 pF @ 40 V1400 pF @ 25 V510 pF @ 40 V1400 pF @ 25 V
Rds On (Max) @ Id, Vgs9.5mOhm @ 10A, 10V6.8mOhm @ 35A, 10V21.1mOhm @ 5A, 10V6.8mOhm @ 35A, 10V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
FET Feature----

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