NVMTSC4D3N15MC

PTNG 150V IN CEBU DFNW 8X8 DUAL

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Specifications
Part Number:NVMTSC4D3N15MC
Manufacturer:AMI Semiconductor/onsemi
Description:PTNG 150V IN CEBU DFNW 8X8 DUAL
RoHs Status:
Nkesp Part Number:73D-NVMTSC4D3N15MC
Part Status7268 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:4.5V @ 521µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-TDFNW (8.3x8.4)
Series:DUAL COOL®
Rds On (Max) @ Id, Vgs:4.45mOhm @ 95A, 10V
Power Dissipation (Max):5W (Ta), 292W (Tc)
Package / Case:8-PowerTDFN
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Input Capacitance (Ciss) (Max) @ Vds:6514 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs:79 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:23A (Ta), 165A (Tc)
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In stock: 7268 pcs

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Data sheet

Product Comparison

Part Number NVMTSC4D3N15MC
NVMTSC4D3N15MC
NVMYS012N10MCLTWG
NVMYS012N10MCLTWG
NVMYS010N04CLTWG
NVMYS010N04CLTWG
NVMTS0D7N06CTXG
NVMTS0D7N06CTXG
Manufactureronsemionsemionsemionsemi
Current - Continuous Drain (Id) @ 25°C23A (Ta), 165A (Tc)11.6A (Ta), 52A (Tc)14A (Ta), 38A (Tc)60.5A (Ta), 464A (Tc)
Supplier Device Package8-TDFNW (8.3x8.4)LFPAK4 (5x6)LFPAK4 (5x6)8-DFNW (8.3x8.4)
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Vgs(th) (Max) @ Id4.5V @ 521µA3V @ 77µA2V @ 20µA4V @ 250µA
SeriesDUAL COOL®Automotive, AEC-Q101Automotive, AEC-Q101Automotive, AEC-Q101
Gate Charge (Qg) (Max) @ Vgs79 nC @ 10 V19 nC @ 10 V7.3 nC @ 10 V152 nC @ 10 V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Power Dissipation (Max)5W (Ta), 292W (Tc)3.6W (Ta), 72W (Tc)3.8W (Ta), 28W (Tc)5W (Ta), 294.6W (Tc)
Drain to Source Voltage (Vdss)150 V100 V40 V60 V
Rds On (Max) @ Id, Vgs4.45mOhm @ 95A, 10V12.2mOhm @ 14A, 10V10.3mOhm @ 20A, 10V0.72mOhm @ 50A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)10V4.5V, 10V4.5V, 10V10V
FET Feature----
Package / Case8-PowerTDFNSOT-1023, 4-LFPAKSOT-1023, 4-LFPAK8-PowerTDFN
Vgs (Max)±20V±20V±20V±20V
Input Capacitance (Ciss) (Max) @ Vds6514 pF @ 75 V1338 pF @ 50 V570 pF @ 25 V11535 pF @ 30 V
Mounting TypeSurface Mount, Wettable FlankSurface MountSurface MountSurface Mount

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