NVH4L160N120SC1

SICFET N-CH 1200V 17.3A TO247

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Specifications
Part Number:NVH4L160N120SC1
Manufacturer:onsemi
Description:SICFET N-CH 1200V 17.3A TO247
RoHs Status:
Nkesp Part Number:73D-NVH4L160N120SC1
Part Status3434 pcs
Manufacturer:onsemi
Vgs(th) (Max) @ Id:4.3V @ 2.5mA
Vgs (Max):+25V, -15V
Technology:SiCFET (Silicon Carbide)
Supplier Device Package:TO-247-4L
Series:Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:224mOhm @ 12A, 20V
Power Dissipation (Max):111W (Tc)
Package / Case:TO-247-4
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:665 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 20 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):20V
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:17.3A (Tc)
Base Product Number:NVH4L160
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In stock: 3434 pcs

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Data sheet

Product Comparison

Part Number NVH4L160N120SC1
NVH4L160N120SC1
NVHL040N120SC1
NVHL040N120SC1
NVH4L060N065SC1
NVH4L060N065SC1
NVH4L060N090SC1
NVH4L060N090SC1
Manufactureronsemionsemionsemionsemi
Drive Voltage (Max Rds On, Min Rds On)20V20V15V, 18V15V, 18V
SeriesAutomotive, AEC-Q101Automotive, AEC-Q101Automotive, AEC-Q101Automotive, AEC-Q101
Base Product NumberNVH4L160NVHL040NVH4L060NVH4L060
Current - Continuous Drain (Id) @ 25°C17.3A (Tc)60A (Tc)47A (Tc)46A (Tc)
PackageTubeTubeTubeTube
Rds On (Max) @ Id, Vgs224mOhm @ 12A, 20V56mOhm @ 35A, 20V70mOhm @ 20A, 18V84mOhm @ 20A, 15V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
FET Feature----
Gate Charge (Qg) (Max) @ Vgs34 nC @ 20 V106 nC @ 20 V74 nC @ 18 V87 nC @ 15 V
Package / CaseTO-247-4TO-247-3TO-247-4TO-247-4
Power Dissipation (Max)111W (Tc)348W (Tc)176W (Tc)221W (Tc)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Vgs (Max)+25V, -15V+25V, -15V-+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds665 pF @ 800 V1781 pF @ 800 V1473 pF @ 325 V1770 pF @ 450 V
Supplier Device PackageTO-247-4LTO-247-3TO-247-4LTO-247-4L
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Vgs(th) (Max) @ Id4.3V @ 2.5mA4.3V @ 10mA4.3V @ 6.5mA4.3V @ 5mA
TechnologySiCFET (Silicon Carbide)SiCFET (Silicon Carbide)SiCFET (Silicon Carbide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V1200 V650 V900 V

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