NVATS5A113PLZT4G

MOSFET P-CHANNEL 60V 38A ATPAK

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RFQ
Specifications
Part Number:NVATS5A113PLZT4G
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET P-CHANNEL 60V 38A ATPAK
RoHs Status:
Nkesp Part Number:73D-NVATS5A113PLZT4G
Part Status26059 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:2.6V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:ATPAK
Series:-
Rds On (Max) @ Id, Vgs:29.5 mOhm @ 18A, 10V
Power Dissipation (Max):60W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:8 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2400pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:55nC @ 10V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Drain to Source Voltage (Vdss):60V
Detailed Description:P-Channel 60V 38A (Ta) 60W (Tc) Surface Mount ATPAK
Current - Continuous Drain (Id) @ 25°C:38A (Ta)
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In stock: 26059 pcs

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Data sheet

Product Comparison

Part Number NVATS5A113PLZT4G
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NVMYS2D1N04CLTWG
NVMYS2D1N04CLTWG
ManufacturerAMI Semiconductor / ON Semiconductoronsemionsemionsemi
Detailed DescriptionP-Channel 60V 38A (Ta) 60W (Tc) Surface Mount ATPAK---
Rds On (Max) @ Id, Vgs29.5 mOhm @ 18A, 10V13mOhm @ 35A, 10V13mOhm @ 28A, 10V2.5mOhm @ 50A, 10V
Moisture Sensitivity Level (MSL)1 (Unlimited)---
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Lead Free Status / RoHS StatusLead free / RoHS Compliant---
Manufacturer Standard Lead Time8 Weeks---
Drain to Source Voltage (Vdss)60V60 V30 V40 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63SOT-1023, 4-LFPAK
FET Feature----
PackagingTape & Reel (TR)---
Supplier Device PackageATPAKATPAKATPAKLFPAK4 (5x6)
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Power Dissipation (Max)60W (Tc)84W (Tc)60W (Tc)3.9W (Ta), 83W (Tc)
Gate Charge (Qg) (Max) @ Vgs55nC @ 10V115 nC @ 10 V47 nC @ 10 V50 nC @ 10 V
FET TypeP-ChannelP-ChannelP-ChannelN-Channel
Input Capacitance (Ciss) (Max) @ Vds2400pF @ 20V5400 pF @ 20 V2430 pF @ 10 V3100 pF @ 25 V
Series-Automotive, AEC-Q101Automotive, AEC-Q101Automotive, AEC-Q101
Vgs(th) (Max) @ Id2.6V @ 1mA2.6V @ 1mA2.6V @ 1mA2V @ 90µA
Current - Continuous Drain (Id) @ 25°C38A (Ta)80A (Ta)60A (Ta)29A (Ta), 132A (Tc)
Vgs (Max)±20V±20V±20V±20V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount

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