NTP5860NG

SINGLE N-CHANNEL POWER MOSFET 60

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Specifications
Part Number:NTP5860NG
Manufacturer:onsemi
Description:SINGLE N-CHANNEL POWER MOSFET 60
Nkesp Part Number:73D-NTP5860NG
Part Status10952 pcs
Manufacturer:onsemi
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220
Series:-
Rds On (Max) @ Id, Vgs:3mOhm @ 75A, 10V
Power Dissipation (Max):283W (Tc)
Package / Case:TO-220-3
Package:Bulk
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:10760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:220A (Tc)
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In stock: 10952 pcs

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Data sheet

Product Comparison

Part Number NTP5860NG
NTP5860NG
NTP45N06LG
NTP45N06LG
NTP60N06LG
NTP60N06LG
NTP5426NG
NTP5426NG
Manufactureronsemionsemionsemionsemi
Vgs (Max)±20V±15V±15V±20V
Input Capacitance (Ciss) (Max) @ Vds10760 pF @ 25 V1700 pF @ 25 V3075 pF @ 25 V5800 pF @ 25 V
Supplier Device PackageTO-220TO-220TO-220TO-220
Series----
Power Dissipation (Max)283W (Tc)2.4W (Ta), 125W (Tj)2.4W (Ta), 150W (Tj)215W (Tc)
Drain to Source Voltage (Vdss)60 V60 V60 V60 V
Drive Voltage (Max Rds On, Min Rds On)10V5V5V10V
PackageBulkTubeTubeTube
Gate Charge (Qg) (Max) @ Vgs180 nC @ 10 V32 nC @ 5 V65 nC @ 5 V170 nC @ 10 V
FET Feature----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C220A (Tc)45A (Ta)60A (Ta)120A (Tc)
Vgs(th) (Max) @ Id4V @ 250µA2V @ 250µA2V @ 250µA4V @ 250µA
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Rds On (Max) @ Id, Vgs3mOhm @ 75A, 10V28mOhm @ 22.5A, 5V16mOhm @ 30A, 5V6mOhm @ 60A, 10V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)

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