NTMFS005P03P8ZST1G

PT8P PORTFOLIO EXPANSION

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RFQ
Specifications
Part Number:NTMFS005P03P8ZST1G
Manufacturer:AMI Semiconductor/onsemi
Description:PT8P PORTFOLIO EXPANSION
RoHs Status:
Nkesp Part Number:73D-NTMFS005P03P8ZST1G
Part Status19494 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±25V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Series:-
Rds On (Max) @ Id, Vgs:2.7mOhm @ 22A, 10V
Power Dissipation (Max):900mW (Ta)
Package / Case:8-PowerTDFN, 5 Leads
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:7880 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:183 nC @ 10 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:15.3A (Ta)

In stock: 19494 pcs

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Product Comparison

Part Number NTMFS005P03P8ZST1G
NTMFS005P03P8ZST1G
NTMFS002N10MCLT1G
NTMFS002N10MCLT1G
NTMFS010N10GTWG
NTMFS010N10GTWG
NTMFS006N12MCT1G
NTMFS006N12MCT1G
Manufactureronsemionsemionsemionsemi
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
FET Feature----
Vgs(th) (Max) @ Id3V @ 250µA3V @ 351µA4V @ 164µA4V @ 260µA
Drain to Source Voltage (Vdss)30 V100 V100 V120 V
Supplier Device Package5-DFN (5x6) (8-SOFL)5-DFN (5x6) (8-SOFL)8-PQFN (5x6)5-DFN (5x6) (8-SOFL)
Rds On (Max) @ Id, Vgs2.7mOhm @ 22A, 10V2.8mOhm @ 50A, 10V10.8mOhm @ 31A, 10V6mOhm @ 46A, 10V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Package / Case8-PowerTDFN, 5 Leads8-PowerTDFN, 5 Leads8-PowerTDFN8-PowerTDFN, 5 Leads
Input Capacitance (Ciss) (Max) @ Vds7880 pF @ 15 V7200 pF @ 50 V3950 pF @ 50 V3365 pF @ 60 V
Current - Continuous Drain (Id) @ 25°C15.3A (Ta)22A (Ta), 175A (Tc)11A (Tc)15A (Ta), 93A (Tc)
Series----
Vgs (Max)±25V±20V±20V±20V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V10V6V, 10V
Gate Charge (Qg) (Max) @ Vgs183 nC @ 10 V97 nC @ 10 V58.5 nC @ 10 V42 nC @ 10 V
FET TypeP-ChannelN-ChannelN-ChannelN-Channel
Power Dissipation (Max)900mW (Ta)3W (Ta), 189W (Tc)3W (Tc)2.7W (Ta), 104W (Tc)

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