NTMD4N03R2

MOSFET PWR N-CH DL 4A 30V 8SOIC

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Specifications
Part Number:NTMD4N03R2
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET PWR N-CH DL 4A 30V 8SOIC
Nkesp Part Number:73D-NTMD4N03R2
Part Status3603 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:3V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOIC
Series:-
Rds On (Max) @ Id, Vgs:60mOhm @ 4A, 10V
Power - Max:2W
Package / Case:8-SOIC (0.154", 3.90mm Width)
Package:Bulk
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:400pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:4A
Configuration:2 N-Channel (Dual)
Base Product Number:NTMD4
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In stock: 3603 pcs

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Product Comparison

Part Number NTMD4N03R2
NTMD4N03R2
NTMD3N08LR2
NTMD3N08LR2
NTMD6N04R2G
NTMD6N04R2G
NTMD6P02R2
NTMD6P02R2
Manufactureronsemionsemionsemionsemi
Package / Case8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)-
Series----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)-
Mounting TypeSurface MountSurface MountSurface Mount-
Base Product NumberNTMD4NTMD3NTMD6NTMD6P
Power - Max2W3.1W1.29W-
Drain to Source Voltage (Vdss)30V80V40V-
FET FeatureLogic Level GateLogic Level GateLogic Level Gate-
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V15nC @ 10V30nC @ 10V-
Vgs(th) (Max) @ Id3V @ 250µA3V @ 250µA3V @ 250µA-
Rds On (Max) @ Id, Vgs60mOhm @ 4A, 10V215mOhm @ 2.5A, 10V34mOhm @ 5.8A, 10V-
Current - Continuous Drain (Id) @ 25°C4A2.3A4.6A-
Configuration2 N-Channel (Dual)2 N-Channel (Dual)2 N-Channel (Dual)-
Supplier Device Package8-SOIC8-SOIC8-SOIC-
Input Capacitance (Ciss) (Max) @ Vds400pF @ 20V480pF @ 25V900pF @ 32V-
PackageBulkBulkTape & Reel (TR)Bulk

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