NTE2960

MOSFET-N-CHAN ENHANCEMENT

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Specifications
Part Number:NTE2960
Manufacturer:NTE Electronics, Inc.
Description:MOSFET-N-CHAN ENHANCEMENT
RoHs Status:
ROHS3 Compliant
Nkesp Part Number:73D-NTE2960
Part Status4029 pcs
Manufacturer:NTE Electronics, Inc.
Vgs(th) (Max) @ Id:4V @ 1mA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220 Full Pack
Series:-
Rds On (Max) @ Id, Vgs:2Ohm @ 3A, 10V
Power - Max:40W
Package / Case:TO-220-3 Full Pack
Package:Bag
Operating Temperature:-55°C ~ 150°C
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1380pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:-
FET Feature:-
Drain to Source Voltage (Vdss):900V
Current - Continuous Drain (Id) @ 25°C:7A
Configuration:2 N-Channel
Base Product Number:NTE29
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In stock: 4029 pcs

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Data sheet

Product Comparison

Part Number NTE2960
NTE2960
NTE4007
NTE4007
NTE2932
NTE2932
NTE2930
NTE2930
ManufacturerNTE Electronics, IncNTE Electronics, IncNTE Electronics, IncNTE Electronics, Inc
Current - Continuous Drain (Id) @ 25°C7A-21.3A (Tc)31A (Tc)
FET Feature----
Configuration2 N-Channel3 N and 3 P-Channel--
Base Product NumberNTE29NTE40--
Input Capacitance (Ciss) (Max) @ Vds1380pF @ 25V-3000 pF @ 25 V2270 pF @ 25 V
Package / CaseTO-220-3 Full Pack-TO-3P-3 Full PackTO-3P-3 Full Pack
Series----
Mounting TypeThrough Hole-Through HoleThrough Hole
Gate Charge (Qg) (Max) @ Vgs--123 nC @ 10 V97 nC @ 10 V
Supplier Device PackageTO-220 Full Pack-TO-3PMLTO-3PML
Drain to Source Voltage (Vdss)900V-200 V100 V
Vgs(th) (Max) @ Id4V @ 1mA-4V @ 250µA4V @ 250µA
PackageBagBagBagBag
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Operating Temperature-55°C ~ 150°C-55°C ~ 125°C-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Power - Max40W500mW--
Rds On (Max) @ Id, Vgs2Ohm @ 3A, 10V-85mOhm @ 10.65A, 10V40mOhm @ 15.5A, 10V

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