NTD6416ANLT4G

MOSFET N-CH 100V 19A DPAK

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Specifications
Part Number:NTD6416ANLT4G
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET N-CH 100V 19A DPAK
RoHs Status:
Nkesp Part Number:73D-NTD6416ANLT4G
Part Status26363 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:2.2V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:DPAK
Series:-
Rds On (Max) @ Id, Vgs:74mOhm @ 19A, 10V
Power Dissipation (Max):71W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Base Product Number:NTD6416
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In stock: 26363 pcs

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Product Comparison

Part Number NTD6416ANLT4G
NTD6416ANLT4G
NTD6416ANL-1G
NTD6416ANL-1G
NTD65N03RG
NTD65N03RG
NTD6600N
NTD6600N
Manufactureronsemionsemionsemionsemi
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63TO-251-3 Short Leads, IPak, TO-251AATO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V40 nC @ 10 V16 nC @ 5 V20 nC @ 5 V
Supplier Device PackageDPAKI-PAKDPAKDPAK
Series----
Vgs(th) (Max) @ Id2.2V @ 250µA2.2V @ 250µA2V @ 250µA2V @ 250µA
Vgs (Max)±20V±20V±20V±20V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V5V
Mounting TypeSurface MountThrough HoleSurface MountSurface Mount
Base Product NumberNTD6416NTD64NTD65NTD66
PackageTape & Reel (TR)TubeTubeTube
FET Feature----
Rds On (Max) @ Id, Vgs74mOhm @ 19A, 10V74mOhm @ 19A, 10V8.4mOhm @ 30A, 10V146mOhm @ 6A, 5V
Drain to Source Voltage (Vdss)100 V100 V25 V100 V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Power Dissipation (Max)71W (Tc)71W (Tc)1.3W (Ta), 50W (Tc)1.28W (Ta), 56.6W (Tc)
Current - Continuous Drain (Id) @ 25°C19A (Tc)19A (Tc)9.5A (Ta), 32A (Tc)12A (Ta)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 25 V1000 pF @ 25 V1400 pF @ 20 V700 pF @ 25 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel

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