NTD4863N-1G

MOSFET N-CH 25V 9.2A/49A IPAK

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Specifications
Part Number:NTD4863N-1G
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET N-CH 25V 9.2A/49A IPAK
Nkesp Part Number:73D-NTD4863N-1G
Part Status4462 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I-PAK
Series:-
Rds On (Max) @ Id, Vgs:9.3mOhm @ 30A, 10V
Power Dissipation (Max):1.27W (Ta), 36.6W (Tc)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:990 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs:13.5 nC @ 4.5 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:9.2A (Ta), 49A (Tc)
Base Product Number:NTD48
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In stock: 4462 pcs

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Product Comparison

Part Number NTD4863N-1G
NTD4863N-1G
NTD4863NT4G
NTD4863NT4G
NTD4858NA-35G
NTD4858NA-35G
NTD4863NA-1G
NTD4863NA-1G
Manufactureronsemionsemionsemionsemi
Package / CaseTO-251-3 Short Leads, IPak, TO-251AATO-252-3, DPak (2 Leads + Tab), SC-63TO-251-3 Stub Leads, IPakTO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
FET Feature----
Base Product NumberNTD48NTD48NTD48NTD48
Supplier Device PackageI-PAKDPAKI-PakI-PAK
Mounting TypeThrough HoleSurface MountThrough HoleThrough Hole
Series----
Power Dissipation (Max)1.27W (Ta), 36.6W (Tc)1.27W (Ta), 36.6W (Tc)1.3W (Ta), 54.5W (Tc)1.27W (Ta), 36.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds990 pF @ 12 V990 pF @ 12 V1563 pF @ 12 V990 pF @ 12 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V--
Vgs (Max)±20V±20V--
Rds On (Max) @ Id, Vgs9.3mOhm @ 30A, 10V9.3mOhm @ 30A, 10V6.2mOhm @ 30A, 10V9.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C9.2A (Ta), 49A (Tc)9.2A (Ta), 49A (Tc)11.2A (Ta), 73A (Tc)9.2A (Ta), 49A (Tc)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V25 V25 V25 V
Gate Charge (Qg) (Max) @ Vgs13.5 nC @ 4.5 V13.5 nC @ 4.5 V19.2 nC @ 4.5 V13.5 nC @ 4.5 V
Vgs(th) (Max) @ Id2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA
PackageTubeTape & Reel (TR)TubeTube

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