NP80N04KHE-E1-AY

MOSFET N-CH 40V 80A TO263

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Part Number:NP80N04KHE-E1-AY
Manufacturer:Renesas Electronics Corporation
Description:MOSFET N-CH 40V 80A TO263
RoHs Status:
Nkesp Part Number:73D-NP80N04KHE-E1-AY
Part Status3210 pcs
Manufacturer:Renesas Electronics Corporation
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-263
Series:-
Rds On (Max) @ Id, Vgs:8mOhm @ 40A, 10V
Power Dissipation (Max):1.8W (Ta), 120W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
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In stock: 3210 pcs

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Product Comparison

Part Number NP80N04KHE-E1-AY
NP80N04KHE-E1-AY
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NP80N03MLE-S18-AY
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NP80N04NLG-S18-AY
NP80N055KLE-E1-AY
NP80N055KLE-E1-AY
ManufacturerRenesas Electronics America IncRenesas Electronics America IncNEC CorporationRenesas
Current - Continuous Drain (Id) @ 25°C80A (Tc)80A (Tc)80A (Tc)80A (Tc)
Drain to Source Voltage (Vdss)40 V30 V40 V55 V
Vgs(th) (Max) @ Id4V @ 250µA2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA
PackageTape & Reel (TR)TubeTubeBulk
Operating Temperature175°C (TJ)175°C (TJ)175°C (TJ)175°C
Rds On (Max) @ Id, Vgs8mOhm @ 40A, 10V7mOhm @ 40A, 10V4.8mOhm @ 40A, 10V11mOhm @ 40A, 10V
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-220-3TO-262-3 Long Leads, I²Pak, TO-262AATO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263TO-220TO-262TO-263-3
Vgs (Max)±20V--±20V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V72 nC @ 10 V135 nC @ 10 V75 nC @ 10 V
Mounting TypeSurface MountThrough HoleThrough HoleSurface Mount
Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 25 V3900 pF @ 25 V6900 pF @ 25 V4400 pF @ 25 V
FET Feature----
Series----
Drive Voltage (Max Rds On, Min Rds On)10V--4.5V, 10V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Power Dissipation (Max)1.8W (Ta), 120W (Tc)1.8W (Ta), 120W (Tc)1.8W (Ta), 115W (Tc)1.8W (Ta), 120W (Tc)

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