NP60N04VLK-E1-AY

P-TRS2 AUTOMOTIVE MOS

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Specifications
Part Number:NP60N04VLK-E1-AY
Manufacturer:Renesas Electronics Corporation
Description:P-TRS2 AUTOMOTIVE MOS
RoHs Status:
Nkesp Part Number:73D-NP60N04VLK-E1-AY
Part Status26947 pcs
Manufacturer:Renesas Electronics Corporation
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-252 (MP-3ZP)
Series:Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:3.9mOhm @ 30A, 10V
Power Dissipation (Max):1.2W (Ta), 105W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Tape & Reel (TR)
Operating Temperature:175°C
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:3680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
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In stock: 26947 pcs

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Product Comparison

Part Number NP60N04VLK-E1-AY
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ManufacturerRenesas Electronics America IncRenesas Electronics America IncRenesas Electronics America IncRenesas Electronics America Inc
PackageTape & Reel (TR)Tape & Reel (TR)TubeTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)-MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Operating Temperature175°C-175°C (TJ)175°C
SeriesAutomotive, AEC-Q101--Automotive, AEC-Q101
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V-10V4.5V, 10V
Power Dissipation (Max)1.2W (Ta), 105W (Tc)-1.8W (Ta), 105W (Tc)1.2W (Ta), 105W (Tc)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63-TO-220-3TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V-63 nC @ 10 V56 nC @ 10 V
Supplier Device PackageTO-252 (MP-3ZP)-TO-220TO-252 (MP-3ZP)
Rds On (Max) @ Id, Vgs3.9mOhm @ 30A, 10V-6mOhm @ 30A, 10V7.9mOhm @ 30A, 10V
Drain to Source Voltage (Vdss)40 V-55 V60 V
Vgs (Max)±20V-±20V±20V
Mounting TypeSurface Mount-Through HoleSurface Mount
Current - Continuous Drain (Id) @ 25°C60A (Tc)60A (Tc)60A (Tc)60A (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA-4V @ 250µA2.5V @ 250µA
FET Feature----
FET TypeN-Channel-N-ChannelN-Channel
Input Capacitance (Ciss) (Max) @ Vds3680 pF @ 25 V-3750 pF @ 25 V3600 pF @ 25 V

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