NDH8521C

P-CHANNEL MOSFET

Quantity
RFQ
Specifications
Part Number:NDH8521C
Manufacturer:Fairchild (onsemi)
Description:P-CHANNEL MOSFET
Nkesp Part Number:73D-NDH8521C
Part Status21154 pcs
Manufacturer:Fairchild (onsemi)
Vgs(th) (Max) @ Id:2V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SuperSOT™-8
Series:-
Rds On (Max) @ Id, Vgs:33mOhm @ 3.8A, 10V, 70mOhm @ 2.7A, 10V
Power - Max:800mW (Ta)
Package / Case:8-TSOP (0.130", 3.30mm Width)
Package:Bulk
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:500pF @ 15V, 560pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V, 27nC @ 10V
FET Feature:-
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:3.8A (Ta), 2.7A (Ta)
Configuration:N and P-Channel
Base Product Number:NDH8521

In stock: 21154 pcs

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Product Comparison

Part Number NDH8521C
NDH8521C
CAB760M12HM3
CAB760M12HM3
NDH8302P
NDH8302P
RF1S17N06L
RF1S17N06L
ManufacturerFairchild SemiconductorWolfspeed, Inc.Fairchild SemiconductorHarris Corporation
FET Feature----
Current - Continuous Drain (Id) @ 25°C3.8A (Ta), 2.7A (Ta)1015A (Tc)2A (Ta)-
Drain to Source Voltage (Vdss)30V1200V (1.2kV)20V-
PackageBulkBoxBulkBulk
Input Capacitance (Ciss) (Max) @ Vds500pF @ 15V, 560pF @ 15V79400pF @ 800V515pF @ 10V-
Rds On (Max) @ Id, Vgs33mOhm @ 3.8A, 10V, 70mOhm @ 2.7A, 10V1.73mOhm @ 760A, 15V130mOhm @ 2A, 4.5V-
Package / Case8-TSOP (0.130", 3.30mm Width)Module8-TSOP (0.130", 3.30mm Width)-
Series---*
Operating Temperature-55°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-
ConfigurationN and P-Channel2 N-Channel (Half Bridge)2 P-Channel (Dual)-
Power - Max800mW (Ta)-800mW (Ta)-
TechnologyMOSFET (Metal Oxide)Silicon Carbide (SiC)MOSFET (Metal Oxide)-
Vgs(th) (Max) @ Id2V @ 250µA3.6V @ 280mA1V @ 250µA-
Mounting TypeSurface MountChassis MountSurface Mount-
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V, 27nC @ 10V2724nC @ 15V11nC @ 4.5V-
Supplier Device PackageSuperSOT™-8ModuleSuperSOT™-8-
Base Product NumberNDH8521CAB760NDH8302RF1S

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