NDB5060L

MOSFET N-CH 60V 26A D2PAK

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RFQ
Specifications
Part Number:NDB5060L
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET N-CH 60V 26A D2PAK
RoHs Status:
Nkesp Part Number:73D-NDB5060L
Part Status11603 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:2V @ 250µA
Vgs (Max):±16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263)
Series:-
Rds On (Max) @ Id, Vgs:35mOhm @ 13A, 10V
Power Dissipation (Max):68W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-65°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:840 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 5 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Base Product Number:NDB5060
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In stock: 11603 pcs

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Product Comparison

Part Number NDB5060L
NDB5060L
NDB6030L
NDB6030L
NDB7051
NDB7051
NDB6030PL
NDB6030PL
ManufactureronsemiFairchild Semiconductoronsemionsemi
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C26A (Tc)52A (Tc)70A (Tc)30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V4.5V, 10V10V4.5V, 10V
Rds On (Max) @ Id, Vgs35mOhm @ 13A, 10V13.5mOhm @ 26A, 10V13mOhm @ 35A, 10V25mOhm @ 19A, 10V
Vgs(th) (Max) @ Id2V @ 250µA3V @ 250µA4V @ 250µA2V @ 250µA
Operating Temperature-65°C ~ 175°C (TJ)-65°C ~ 175°C (TJ)-65°C ~ 175°C (TJ)-65°C ~ 175°C (TJ)
Power Dissipation (Max)68W (Tc)75W (Tc)130W (Tc)75W (Tc)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Base Product NumberNDB5060-NDB705NDB603
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Series----
Input Capacitance (Ciss) (Max) @ Vds840 pF @ 30 V1350 pF @ 15 V1930 pF @ 25 V1570 pF @ 15 V
Drain to Source Voltage (Vdss)60 V30 V50 V30 V
Vgs (Max)±16V±16V±20V±16V
Supplier Device PackageD²PAK (TO-263)TO-263ABD²PAK (TO-263)D²PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs24 nC @ 5 V60 nC @ 10 V100 nC @ 10 V36 nC @ 5 V
FET Feature----
FET TypeN-ChannelN-ChannelN-ChannelP-Channel
PackageTape & Reel (TR)BulkTape & Reel (TR)Tape & Reel (TR)

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