MTY100N10E

MOSFET N-CH 100V 100A TO264

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Specifications
Part Number:MTY100N10E
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET N-CH 100V 100A TO264
Nkesp Part Number:73D-MTY100N10E
Part Status4213 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-264
Series:-
Rds On (Max) @ Id, Vgs:11mOhm @ 50A, 10V
Power Dissipation (Max):300W (Tc)
Package / Case:TO-264-3, TO-264AA
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:10640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:378 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Base Product Number:MTY10
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In stock: 4213 pcs

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Data sheet

Product Comparison

Part Number MTY100N10E
MTY100N10E
AO3404_101
AO3404_101
UF3C170400B7S
UF3C170400B7S
GSFW02009
GSFW02009
ManufactureronsemiAlpha & Omega Semiconductor Inc.QorvoGood-Ark Semiconductor
Drive Voltage (Max Rds On, Min Rds On)10V4.5V, 10V12V1.8V, 4.5V
Supplier Device PackageTO-264SOT-23-3D2PAK-7SOT-883
Drain to Source Voltage (Vdss)100 V30 V1700 V20 V
Package / CaseTO-264-3, TO-264AA3-SMD, SOT-23-3 VariantTO-263-8, D²Pak (7 Leads + Tab), TO-263CASC-101, SOT-883
FET TypeN-ChannelN-ChannelN-ChannelP-Channel
Input Capacitance (Ciss) (Max) @ Vds10640 pF @ 25 V310 pF @ 15 V734 pF @ 1200 V58 pF @ 10 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)5A (Ta)7.6A (Tc)850mA (Ta)
Mounting TypeThrough HoleSurface MountSurface MountSurface Mount
PackageTubeTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Vgs (Max)±20V±20V±25V±12V
FET Feature----
Power Dissipation (Max)300W (Tc)1.4W (Ta)100W (Tc)690mW (Ta)
Gate Charge (Qg) (Max) @ Vgs378 nC @ 10 V6.3 nC @ 10 V23.1 nC @ 15 V0.8 nC @ 4.5 V
Base Product NumberMTY10AO34UF3C170400-
Series----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)SiCFET (Cascode SiCJFET)MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA2.4V @ 250µA6V @ 10mA1V @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs11mOhm @ 50A, 10V31mOhm @ 5A, 10V515mOhm @ 5A, 12V640mOhm @ 550mA, 4.5V

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