MSC080SMA120S

SICFET N-CH 1200V 35A D3PAK

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Specifications
Part Number:MSC080SMA120S
Manufacturer:Micrel / Microchip Technology
Description:SICFET N-CH 1200V 35A D3PAK
RoHs Status:
Nkesp Part Number:73D-MSC080SMA120S
Part Status2251 pcs
Manufacturer:Micrel / Microchip Technology
Vgs(th) (Max) @ Id:2.8V @ 1mA
Vgs (Max):+23V, -10V
Technology:SiCFET (Silicon Carbide)
Supplier Device Package:D3PAK
Series:-
Rds On (Max) @ Id, Vgs:100mOhm @ 15A, 20V
Power Dissipation (Max):182W (Tc)
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:838 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 20 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):20V
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:35A
Base Product Number:MSC080
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In stock: 2251 pcs

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Data sheet

Product Comparison

Part Number MSC080SMA120S
MSC080SMA120S
MSC060SMA070B
MSC060SMA070B
MSC080SMA120JS15
MSC080SMA120JS15
MSC040SMA120S/TR
MSC040SMA120S/TR
ManufacturerMicrochip TechnologyMicrochip TechnologyMicrochip TechnologyMicrochip Technology
Current - Continuous Drain (Id) @ 25°C35A39A (Tc)31A (Tc)64A (Tc)
Series----
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Base Product NumberMSC080MSC060MSC080-
Drain to Source Voltage (Vdss)1200 V700 V1200 V1200 V
Drive Voltage (Max Rds On, Min Rds On)20V20V20V20V
TechnologySiCFET (Silicon Carbide)SiCFET (Silicon Carbide)SiCFET (Silicon Carbide)SiCFET (Silicon Carbide)
Mounting TypeSurface MountThrough HoleChassis MountSurface Mount
Vgs (Max)+23V, -10V+23V, -10V+23V, -10V+23V, -10V
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AATO-247-3SOT-227-4, miniBLOCTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Gate Charge (Qg) (Max) @ Vgs64 nC @ 20 V56 nC @ 20 V64 nC @ 20 V137 nC @ 20 V
Rds On (Max) @ Id, Vgs100mOhm @ 15A, 20V75mOhm @ 20A, 20V100mOhm @ 15A, 20V50mOhm @ 40A, 20V
FET Feature----
Input Capacitance (Ciss) (Max) @ Vds838 pF @ 1000 V1175 pF @ 700 V838 pF @ 1000 V1990 pF @ 1000 V
Vgs(th) (Max) @ Id2.8V @ 1mA2.4V @ 1mA2.8V @ 1mA2.6V @ 2mA
Power Dissipation (Max)182W (Tc)143W (Tc)143W (Tc)303W (Tc)
Supplier Device PackageD3PAKTO-247-3SOT-227 (ISOTOP®)TO-268
PackageTubeTubeBulkTape & Reel (TR)

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