JANTXV2N6796

MOSFET N-CH 100V 8A TO205AF

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Specifications
Part Number:JANTXV2N6796
Manufacturer:Microsemi
Description:MOSFET N-CH 100V 8A TO205AF
Nkesp Part Number:73D-JANTXV2N6796
Part Status3576 pcs
Manufacturer:Microsemi
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-205AF (TO-39)
Series:Military, MIL-PRF-19500/557
Rds On (Max) @ Id, Vgs:195mOhm @ 8A, 10V
Power Dissipation (Max):800mW (Ta), 25W (Tc)
Package / Case:TO-205AF Metal Can
Package:Bulk
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Gate Charge (Qg) (Max) @ Vgs:28.51 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
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In stock: 3576 pcs

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Data sheet

Product Comparison

Part Number JANTXV2N6796
JANTXV2N6796
JANTXV2N6782
JANTXV2N6782
JANTXV2N6849
JANTXV2N6849
JANTXV2N6802
JANTXV2N6802
ManufacturerMicrosemi CorporationMicrosemi CorporationMicrosemi CorporationMicrosemi Corporation
SeriesMilitary, MIL-PRF-19500/557Military, MIL-PRF-19500/556Military, MIL-PRF-19500/564Military, MIL-PRF-19500/557
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA4V @ 250µA4V @ 250µA
Current - Continuous Drain (Id) @ 25°C8A (Tc)3.5A (Tc)6.5A (Tc)2.5A (Tc)
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Rds On (Max) @ Id, Vgs195mOhm @ 8A, 10V610mOhm @ 3.5A, 10V320mOhm @ 6.5A, 10V1.6Ohm @ 2.5A, 10V
Supplier Device PackageTO-205AF (TO-39)TO-205AF (TO-39)TO-205AF (TO-39)TO-205AF (TO-39)
FET Feature----
Drain to Source Voltage (Vdss)100 V100 V100 V500 V
FET TypeN-ChannelN-ChannelP-ChannelN-Channel
Gate Charge (Qg) (Max) @ Vgs28.51 nC @ 10 V8.1 nC @ 10 V34.8 nC @ 10 V33 nC @ 10 V
Package / CaseTO-205AF Metal CanTO-205AF Metal CanTO-205AF Metal CanTO-205AF Metal Can
PackageBulkBulkBulkBulk
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Power Dissipation (Max)800mW (Ta), 25W (Tc)800mW (Ta), 15W (Tc)800mW (Ta), 25W (Tc)800mW (Ta), 25W (Tc)
Vgs (Max)±20V±20V±20V±20V

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