IXTP12N50P

MOSFET N-CH 500V 12A TO220AB

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Specifications
Part Number:IXTP12N50P
Manufacturer:IXYS / Littelfuse
Description:MOSFET N-CH 500V 12A TO220AB
RoHs Status:
Nkesp Part Number:73D-IXTP12N50P
Part Status15691 pcs
Manufacturer:IXYS / Littelfuse
Vgs(th) (Max) @ Id:5.5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220-3
Series:Polar
Rds On (Max) @ Id, Vgs:500mOhm @ 6A, 10V
Power Dissipation (Max):200W (Tc)
Package / Case:TO-220-3
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Base Product Number:IXTP12
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In stock: 15691 pcs

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Data sheet

Product Comparison

Part Number IXTP12N50P
IXTP12N50P
IXTP140N055T2
IXTP140N055T2
IXTP130N065T2
IXTP130N065T2
IXTP120P065T
IXTP120P065T
ManufacturerIXYSIXYSIXYSIXYS
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs500mOhm @ 6A, 10V5.4mOhm @ 50A, 10V6.6mOhm @ 50A, 10V10mOhm @ 500mA, 10V
FET TypeN-ChannelN-ChannelN-ChannelP-Channel
PackageTubeTubeTubeTube
FET Feature----
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Base Product NumberIXTP12IXTP140IXTP130IXTP120
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Drain to Source Voltage (Vdss)500 V55 V65 V65 V
Input Capacitance (Ciss) (Max) @ Vds1830 pF @ 25 V4760 pF @ 25 V4800 pF @ 25 V13200 pF @ 25 V
Vgs(th) (Max) @ Id5.5V @ 250µA4V @ 250µA4V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V82 nC @ 10 V79 nC @ 10 V185 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)140A (Tc)130A (Tc)120A (Tc)
SeriesPolarTrenchT2™TrenchT2™TrenchP™
Vgs (Max)±30V±20V±20V±15V
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Supplier Device PackageTO-220-3TO-220-3TO-220-3TO-220-3
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Power Dissipation (Max)200W (Tc)250W (Tc)250W (Tc)298W (Tc)

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