ISL9N302AP3

MOSFET N-CH 30V 75A TO220-3

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RFQ
Specifications
Part Number:ISL9N302AP3
Manufacturer:Fairchild Semiconductor
Description:MOSFET N-CH 30V 75A TO220-3
RoHs Status:
Nkesp Part Number:73D-ISL9N302AP3
Part Status3984 pcs
Manufacturer:Fairchild Semiconductor
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220-3
Series:UltraFET™
Rds On (Max) @ Id, Vgs:2.5mOhm @ 75A, 10V
Power Dissipation (Max):345W (Tc)
Package / Case:TO-220-3
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:11000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)

In stock: 3984 pcs

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Product Comparison

Part Number ISL9N302AP3
ISL9N302AP3
ISL9N302AP3
ISL9N302AP3
ISL9N2357D3ST
ISL9N2357D3ST
ISL9N302AS3ST
ISL9N302AS3ST
ManufacturerFairchild SemiconductoronsemiFairchild Semiconductoronsemi
Mounting TypeThrough HoleThrough HoleSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Power Dissipation (Max)345W (Tc)345W (Tc)100W (Tc)345W (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V10V4.5V, 10V
Package / CaseTO-220-3TO-220-3TO-252-3, DPak (2 Leads + Tab), SC-63TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss)30 V30 V30 V30 V
Current - Continuous Drain (Id) @ 25°C75A (Tc)75A (Tc)35A (Tc)75A (Tc)
FET Feature----
Rds On (Max) @ Id, Vgs2.5mOhm @ 75A, 10V2.5mOhm @ 75A, 10V7mOhm @ 35A, 10V2.3mOhm @ 75A, 10V
Supplier Device PackageTO-220-3TO-220-3TO-252-3 (DPAK)D²PAK (TO-263)
SeriesUltraFET™UltraFET™UltraFET®UltraFET™
Input Capacitance (Ciss) (Max) @ Vds11000 pF @ 15 V11000 pF @ 15 V5600 pF @ 25 V11000 pF @ 15 V
PackageTubeTubeBulkTape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs300 nC @ 10 V300 nC @ 10 V258 nC @ 20 V300 nC @ 10 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Vgs(th) (Max) @ Id3V @ 250µA3V @ 250µA4V @ 250µA3V @ 250µA
Vgs (Max)±20V±20V±20V±20V

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